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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
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    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    ALD1108ESCL

    ALD1108ESCL

    MOSFET 4N-CH 10V 16SOIC

    Advanced Linear Devices Inc.

    4,751
    RFQ
    ALD1108ESCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Not For New Designs MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 25pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD110908SAL

    ALD110908SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    3,775
    RFQ
    ALD110908SAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110914SAL

    ALD110914SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    2,622
    RFQ
    ALD110914SAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    SLA5212

    SLA5212

    MOSFET 6N-CH 35V 8A 15ZIP

    Sanken Electric USA Inc.

    2,789
    RFQ
    SLA5212

    Tabla de datos

    - 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 35V 8A - - - - - - - - Through Hole 15-ZIP
    FDMS3604AS

    FDMS3604AS

    MOSFET 2N-CH 30V 13A/23A POWER56

    onsemi

    4,077
    RFQ
    FDMS3604AS

    Tabla de datos

    PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 23A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1695pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    ALD110808SCL

    ALD110808SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    4,019
    RFQ
    ALD110808SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    SI7983DP-T1-E3

    SI7983DP-T1-E3

    MOSFET 2P-CH 20V 7.7A PPAK SO8

    Vishay Siliconix

    2,863
    RFQ

    -

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 7.7A 17mOhm @ 12A, 4.5V 1V @ 600µA 74nC @ 4.5V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    ALD114935SAL

    ALD114935SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    3,260
    RFQ
    ALD114935SAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    FDMS7700S

    FDMS7700S

    MOSFET 2N-CH 30V 12A/22A POWER56

    onsemi

    2,709
    RFQ
    FDMS7700S

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 22A 7.5mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1750pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    FDMD82100

    FDMD82100

    MOSFET 2N-CH 100V 7A 12POWER

    onsemi

    4,766
    RFQ
    FDMD82100

    Tabla de datos

    PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 7A 19mOhm @ 7A, 10V 4V @ 250µA 17nC @ 10V 1070pF @ 50V 1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
    WI62120

    WI62120

    MOSFET 650V 13A 14PQFN

    Wise-Integration

    4,703
    RFQ
    WI62120

    Tabla de datos

    WiseGan™ 14-PowerLDFN Tray Active GaNFET (Gallium Nitride) - - 650V 13A - 2.2V @ 10mA 2.75nC @ 6V 92.7pF @ 400V - -40°C ~ 150°C (TJ) - - Surface Mount 14-PQFN (6x8)
    SIZF640DT-T1-GE3

    SIZF640DT-T1-GE3

    MOSFET 2N-CH 40V 41A PWRPAIR

    Vishay Siliconix

    4,215
    RFQ
    SIZF640DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 41A (Ta), 159A (Tc) 1.37mOhm @ 15A, 10V 2.4V @ 250µA 106nC @ 10V 5750pF @ 20V 4.2W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAIR® 6x5FS
    SMA5135

    SMA5135

    MOSFET 3N/3P-CH 60V 6A 12SIP

    Sanken Electric USA Inc.

    4,968
    RFQ
    SMA5135

    Tabla de datos

    - 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3 Phase Inverter) - 60V 6A (Ta) 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V 2V @ 250µA - 320pF @ 10V, 790pF @ 10V 4W (Ta), 29W (Tc) 150°C - - Through Hole 12-SIP
    ALD212902SAL

    ALD212902SAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    4,193
    RFQ
    ALD212902SAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD212904SAL

    ALD212904SAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    4,062
    RFQ
    ALD212904SAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD212908SAL

    ALD212908SAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    2,731
    RFQ
    ALD212908SAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110902PAL

    ALD110902PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    2,468
    RFQ
    ALD110902PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD110904PAL

    ALD110904PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    2,150
    RFQ
    ALD110904PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD111933PAL

    ALD111933PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    4,347
    RFQ
    ALD111933PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD114804SCL

    ALD114804SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    4,284
    RFQ
    ALD114804SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
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