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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    ALD114904PAL

    ALD114904PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,379
    RFQ
    ALD114904PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD210808SCL

    ALD210808SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    2,040
    RFQ
    ALD210808SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    SP8J5TB

    SP8J5TB

    MOSFET 2P-CH 30V 7A 8SOP

    Rohm Semiconductor

    4,068
    RFQ
    SP8J5TB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 7A 28mOhm @ 7A, 10V 2.5V @ 1mA 25nC @ 5V 2600pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    SI7946DP-T1-E3

    SI7946DP-T1-E3

    MOSFET 2N-CH 150V 2.1A PPAK SO8

    Vishay Siliconix

    3,216
    RFQ
    SI7946DP-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 150V 2.1A 150mOhm @ 3.3A, 10V 4V @ 250µA 20nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SI7946DP-T1-GE3

    SI7946DP-T1-GE3

    MOSFET 2N-CH 150V 2.1A PPAK SO8

    Vishay Siliconix

    4,877
    RFQ
    SI7946DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 150V 2.1A 150mOhm @ 3.3A, 10V 4V @ 250µA 20nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    ALD114813SCL

    ALD114813SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    3,735
    RFQ
    ALD114813SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD212900SAL

    ALD212900SAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    2,044
    RFQ
    ALD212900SAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 20mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD114913PAL

    ALD114913PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,020
    RFQ
    ALD114913PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    SLA5060

    SLA5060

    MOSFET 3N/3P-CH 60V 6A 12SIP

    Sanken Electric USA Inc.

    3,966
    RFQ
    SLA5060

    Tabla de datos

    - 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 6A 220mOhm @ 3A, 4V - - 320pF @ 10V, 790pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    ALD212902PAL

    ALD212902PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    2,770
    RFQ
    ALD212902PAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD212904PAL

    ALD212904PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    2,953
    RFQ
    ALD212904PAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD212908PAL

    ALD212908PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    4,456
    RFQ
    ALD212908PAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD210802SCL

    ALD210802SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    2,419
    RFQ
    ALD210802SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD210804SCL

    ALD210804SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    2,728
    RFQ
    ALD210804SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD210814SCL

    ALD210814SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    4,383
    RFQ

    -

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Surface Mount 16-SOIC
    ALD110908PAL

    ALD110908PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    2,728
    RFQ
    ALD110908PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD110914PAL

    ALD110914PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    4,493
    RFQ
    ALD110914PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD110802SCL

    ALD110802SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    3,278
    RFQ
    ALD110802SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD110804SCL

    ALD110804SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    3,913
    RFQ
    ALD110804SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD210808PCL

    ALD210808PCL

    MOSFET 4N-CH 10.6V 0.08A 16PDIP

    Advanced Linear Devices Inc.

    4,733
    RFQ
    ALD210808PCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
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