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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    BSM400D12P3G002

    BSM400D12P3G002

    MOSFET 2N-CH 1200V 400A MODULE

    Rohm Semiconductor

    2
    RFQ
    BSM400D12P3G002

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tc) - 5.6V @ 109.2mA - 17000pF @ 10V 1570W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
    MSCSM170HM087CAG

    MSCSM170HM087CAG

    MOSFET 4N-CH 1700V 238A

    Microchip Technology

    9
    RFQ
    MSCSM170HM087CAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.114kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170AM039CT6AG

    MSCSM170AM039CT6AG

    MOSFET 2N-CH 1700V 523A

    Microchip Technology

    2
    RFQ
    MSCSM170AM039CT6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2.4kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    BSM300D12P3E005

    BSM300D12P3E005

    MOSFET 2N-CH 1200V 300A MODULE

    Rohm Semiconductor

    6
    RFQ
    BSM300D12P3E005

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 300A (Tc) - 5.6V @ 91mA - 14000pF @ 10V 1260W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
    BSM400D12P2G003

    BSM400D12P2G003

    MOSFET 2N-CH 1200V 400A MODULE

    Rohm Semiconductor

    4
    RFQ
    BSM400D12P2G003

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tc) - 4V @ 85mA - 38000pF @ 10V 2450W (Tc) -40°C ~ 150°C (TJ) - - - Module
    ADP360120W3

    ADP360120W3

    MOSFET 6N-CH 1200V 379A ACEPACK

    STMicroelectronics

    6
    RFQ
    ADP360120W3

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 379A (Tj) 3.45mOhm @ 360A, 18V 4.4V @ 40mA 944nC @ 18V 28070pF @ 800V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
    DMC2710UVQ-7

    DMC2710UVQ-7

    MOSFET N/P-CH 20V 1.1A SOT563

    Diodes Incorporated

    535
    RFQ
    DMC2710UVQ-7

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 20V 1.1A (Ta), 800mA (Ta) 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V 1V @ 250µA 0.6nC @ 4.5V, 0.7nC @ 4.5V 42pF @ 16V, 49pF @ 16V 460mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    PJT7828_R1_00001

    PJT7828_R1_00001

    MOSFET 2N-CH 30V 0.3A SOT363

    Panjit International Inc.

    195
    RFQ
    PJT7828_R1_00001

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 300mA (Ta) 1.2Ohm @ 300mA, 4.5V 1V @ 250µA 0.9nC @ 4.5V 45pF @ 10V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    BSS84DWQ-7

    BSS84DWQ-7

    MOSFET 2P-CH 50V 0.13A SOT363

    Diodes Incorporated

    185
    RFQ
    BSS84DWQ-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 50V 130mA (Ta) 10Ohm @ 100mA, 5V 2V @ 1mA - 45pF @ 25V 300mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
    DMG1026UVQ-7

    DMG1026UVQ-7

    MOSFET 2N-CH 60V 0.44A SOT563

    Diodes Incorporated

    880
    RFQ
    DMG1026UVQ-7

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 440mA (Ta) 1.8Ohm @ 500mA, 10V 1.8V @ 250µA 0.45pC @ 4.5V 32pF @ 25V 650mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    DMC2025UFDB-7

    DMC2025UFDB-7

    MOSFET N/P-CH 20V 6A 6UDFN

    Diodes Incorporated

    867
    RFQ
    DMC2025UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 6A (Ta), 3.5A (Ta) 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V 1V @ 250µA, 1.4V @ 250µA 12.3nC @ 10V, 15nC @ 8V 486pF @ 10V, 642pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    XP2530AGY

    XP2530AGY

    MOSFET N/P-CH 30V 3.3A SOT26

    YAGEO XSEMI

    985
    RFQ
    XP2530AGY

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 3.3A (Ta), 2.3A (Ta) 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V 3V @ 250µA 4.5nC @ 4.5V 320pF @ 15V, 260pF @ 15V 1.136W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
    DMN2050LFDB-7

    DMN2050LFDB-7

    MOSFET 2N-CH 20V 3.3A 6UDFN

    Diodes Incorporated

    510
    RFQ
    DMN2050LFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.3A 45mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V 730mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    DMP2040USD-13

    DMP2040USD-13

    MOSFET 2P-CH 20V 6.5A 8SO

    Diodes Incorporated

    585
    RFQ
    DMP2040USD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 6.5A (Ta), 12A (Tc) 33mOhm @ 8.9A, 4.5V 1.5V @ 250µA 19nC @ 8V 834pF @ 10V 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    XP3700YT

    XP3700YT

    MOSFET N/P-CH 30V 8.7A PMPAK

    YAGEO XSEMI

    995
    RFQ
    XP3700YT

    Tabla de datos

    XP3700 8-PowerDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 8.7A (Ta), 6.1A (Tc) 20mOhm @ 8A, 10V 2.5V @ 1mA 8nC @ 4.5V 880pF @ 15V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 3 x 3
    DMTH45M5SPDWQ-13

    DMTH45M5SPDWQ-13

    MOSFET 2N-CH 40V 79A PWRDI50

    Diodes Incorporated

    80
    RFQ
    DMTH45M5SPDWQ-13

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 79A (Tc) 5.5mOhm @ 25A, 10V 3.5V @ 250µA 13.2nC @ 10V 1083pF @ 20V 3.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type UXD)
    KFCAB21520LE

    KFCAB21520LE

    MOSFET 2N-CH 12V 16A 10SMD

    Nuvoton Technology Corporation

    1,000
    RFQ
    KFCAB21520LE

    Tabla de datos

    - 10-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 12V 16A (Ta) 2mOhm @ 8A, 4.5V 1.4V @ 1.64mA 38nC @ 4V 5250pF @ 10V 540mW (Ta) 150°C - - Surface Mount 10-SMD
    SK2S240-45

    SK2S240-45

    45V, 240A, SOT-227, POWER MODULE

    SMC Diode Solutions

    36
    RFQ
    SK2S240-45

    Tabla de datos

    - - Bulk Active - - - - - - - - - - - - - - -
    FAM65CR51DZ1

    FAM65CR51DZ1

    MOSFET 2N-CH 650V 33A APMCD-B16

    onsemi

    67
    RFQ
    FAM65CR51DZ1

    Tabla de datos

    - 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 33A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 160W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
    SH63N65DM6AG

    SH63N65DM6AG

    MOSFET 2N-CH 650V 53A 9ACEPACK

    STMicroelectronics

    38
    RFQ
    SH63N65DM6AG

    Tabla de datos

    ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 650V 53A (Tc) 64mOhm @ 23A, 10V 4.75V @ 250µA 80nC @ 10V 3344pF @ 100V 424W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-ACEPACK SMIT
    Total 5737 Record«Prev1... 134135136137138139140141...287Next»
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