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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    GCMX080A120B2H1P

    GCMX080A120B2H1P

    MOSFET 4N-CH 1200V 27A

    SemiQ

    13
    RFQ
    GCMX080A120B2H1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 27A (Tc) 100mOhm @ 20A, 20V 4V @ 10mA 56nC @ 20V 1362pF @ 800V 119W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    DF16MR12W1M1HFB67BPSA1

    DF16MR12W1M1HFB67BPSA1

    MOSFET 2N-CH 1200V 25A

    Infineon Technologies

    24
    RFQ
    DF16MR12W1M1HFB67BPSA1

    Tabla de datos

    EasyPACK™, CoolSiC™ - Tray Active - 2 N-Channel - 1200V (1.2kV) 25A 32.3mOhm @ 25A, 18V 5.15V @ 10mA 74nC @ 18V 2200pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    GCMX040A120B2H1P

    GCMX040A120B2H1P

    MOSFET 4N-CH 1200V 56A

    SemiQ

    7
    RFQ
    GCMX040A120B2H1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 56A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 121nC @ 20V 3200pF @ 800V 217W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX020A120B2B1P

    GCMX020A120B2B1P

    MOSFET 2N-CH 1200V 102A

    SemiQ

    20
    RFQ
    GCMX020A120B2B1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 241nC @ 20V 6500pF @ 800V 385W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FF33MR12W1M1HB11BPSA1

    FF33MR12W1M1HB11BPSA1

    MOSFET

    Infineon Technologies

    23
    RFQ
    FF33MR12W1M1HB11BPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    GCMX040A120B3H1P

    GCMX040A120B3H1P

    MOSFET 4N-CH 1200V 53A

    SemiQ

    17
    RFQ
    GCMX040A120B3H1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH015P120M3F1PTG

    NXH015P120M3F1PTG

    MOSFET 2N-CH 1200V 77A

    onsemi

    13
    RFQ
    NXH015P120M3F1PTG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    DF14MR12W1M1HFB67BPSA1

    DF14MR12W1M1HFB67BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    24
    RFQ
    DF14MR12W1M1HFB67BPSA1

    Tabla de datos

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    NXH008P120M3F1PG

    NXH008P120M3F1PG

    MOSFET 2N-CH 1200V 145A

    onsemi

    18
    RFQ
    NXH008P120M3F1PG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX020A120B2H1P

    GCMX020A120B2H1P

    MOSFET 4N-CH 1200V 102A

    SemiQ

    10
    RFQ
    GCMX020A120B2H1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FF11MR12W2M1HPB11BPSA1

    FF11MR12W2M1HPB11BPSA1

    MOSFET 1200V

    Infineon Technologies

    18
    RFQ
    FF11MR12W2M1HPB11BPSA1

    Tabla de datos

    CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
    GCMX010A120B3B1P

    GCMX010A120B3B1P

    MOSFET 2N-CH 1200V 173A

    SemiQ

    9
    RFQ
    GCMX010A120B3B1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX020A120B3H1P

    GCMX020A120B3H1P

    MOSFET 4N-CH 1200V 93A

    SemiQ

    4
    RFQ
    GCMX020A120B3H1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FF17MR12W1M1HPB11BPSA1

    FF17MR12W1M1HPB11BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    24
    RFQ
    FF17MR12W1M1HPB11BPSA1

    Tabla de datos

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    DF8MR12W1M1HFB67BPSA1

    DF8MR12W1M1HFB67BPSA1

    MOSFET 2N-CH 1200V 45A AG-EASY1B

    Infineon Technologies

    22
    RFQ
    DF8MR12W1M1HFB67BPSA1

    Tabla de datos

    EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    FF17MR12W1M1HB70BPSA1

    FF17MR12W1M1HB70BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    13
    RFQ
    FF17MR12W1M1HB70BPSA1

    Tabla de datos

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    FF17MR12W1M1HB17BPSA1

    FF17MR12W1M1HB17BPSA1

    MOSFET 2N-CH 1200V 50A AG-EASY1B

    Infineon Technologies

    24
    RFQ

    -

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    NXH011F120M3F2PTHG

    NXH011F120M3F2PTHG

    MOSFET 4N-CH 1200V 105A 34PIM

    onsemi

    13
    RFQ
    NXH011F120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 16mOhm @ 100A, 18V 4.4V @ 60mA 284nC @ 18V 6211.6pF @ 800V 244W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
    FF8MR12W1M1HB70BPSA1

    FF8MR12W1M1HB70BPSA1

    MOSFET

    Infineon Technologies

    20
    RFQ
    FF8MR12W1M1HB70BPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    FF7MR12W1M1HB17BPSA1

    FF7MR12W1M1HB17BPSA1

    MOSFET 2N-CH 1200V AG-EASY1B

    Infineon Technologies

    24
    RFQ

    -

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    Total 5737 Record«Prev1... 135136137138139140141142...287Next»
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