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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NXH007F120M3F2PTHG

    NXH007F120M3F2PTHG

    MOSFET 4N-CH 1200V 149A 34PIM

    onsemi

    6
    RFQ
    NXH007F120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V 9090pF @ 800V 353W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
    MSCSM170HRM451AG

    MSCSM170HRM451AG

    MOSFET 4N-CH 1700V/1200V 64A

    Microchip Technology

    10
    RFQ
    MSCSM170HRM451AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH008T120M3F2PTHG

    NXH008T120M3F2PTHG

    MOSFET 4N-CH 1200V 129A 29PIM

    onsemi

    18
    RFQ
    NXH008T120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V 9129pF @ 800V 371W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
    MSCSM120HRM311AG

    MSCSM120HRM311AG

    MOSFET 4N-CH 1200V/700V 89A

    Microchip Technology

    10
    RFQ
    MSCSM120HRM311AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FF6MR12W2M1HPB11BPSA1

    FF6MR12W2M1HPB11BPSA1

    MOSFET 2N-CH 1200V 200A MODULE

    Infineon Technologies

    18
    RFQ
    FF6MR12W2M1HPB11BPSA1

    Tabla de datos

    HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    FF6MR12W2M1HB11BPSA1

    FF6MR12W2M1HB11BPSA1

    MOSFET 2N-CH 1200V 145A MODULE

    Infineon Technologies

    18
    RFQ
    FF6MR12W2M1HB11BPSA1

    Tabla de datos

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 145A (Tj) 5.4mOhm @ 150A, 18V 5.15V @ 60mA 446nC @ 18V 13200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    GCMX005A120B3B1P

    GCMX005A120B3B1P

    MOSFET 4N-CH 1200V 383A

    SemiQ

    2
    RFQ
    GCMX005A120B3B1P

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) - 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V 23500pF @ 800V 1.154kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH004P120M3F2PNG

    NXH004P120M3F2PNG

    MOSFET 2N-CH 1200V 338A 36PIM

    onsemi

    20
    RFQ
    NXH004P120M3F2PNG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 338A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.098W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    GCMX005A120S7B1

    GCMX005A120S7B1

    MOSFET 2N-CH 1200V 348A

    SemiQ

    20
    RFQ
    GCMX005A120S7B1

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V 29300pF @ 800V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FS13MR12W2M1HPB11BPSA1

    FS13MR12W2M1HPB11BPSA1

    MOSFET

    Infineon Technologies

    18
    RFQ
    FS13MR12W2M1HPB11BPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    CHB011M12GM4

    CHB011M12GM4

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    18
    RFQ
    CHB011M12GM4

    Tabla de datos

    * - Box Active - - - - - - - - - - - - - - -
    CBB011M12GM4

    CBB011M12GM4

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    16
    RFQ
    CBB011M12GM4

    Tabla de datos

    * - Box Active - - - - - - - - - - - - - - -
    CBB011M12GM4T

    CBB011M12GM4T

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    8
    RFQ
    CBB011M12GM4T

    Tabla de datos

    * - Box Active - - - - - - - - - - - - - - -
    CHB011M12GM4T

    CHB011M12GM4T

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    3
    RFQ
    CHB011M12GM4T

    Tabla de datos

    * - Box Active - - - - - - - - - - - - - - -
    CAB011A12GM3T

    CAB011A12GM3T

    MOSFET 2N-CH 1200V 141A MODULE

    Wolfspeed, Inc.

    5
    RFQ
    CAB011A12GM3T

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V 11000pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
    FF4MR12W2M1HPB11BPSA1

    FF4MR12W2M1HPB11BPSA1

    MOSFET 2N-CH 1200V AG-EASY2B

    Infineon Technologies

    17
    RFQ
    FF4MR12W2M1HPB11BPSA1

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
    F411MR12W2M1HPB76BPSA1

    F411MR12W2M1HPB76BPSA1

    MOSFET

    Infineon Technologies

    9
    RFQ
    F411MR12W2M1HPB76BPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    FF6MR12KM1HPHPSA1

    FF6MR12KM1HPHPSA1

    MOSFET

    Infineon Technologies

    10
    RFQ
    FF6MR12KM1HPHPSA1

    Tabla de datos

    - - Tray Active - - - - - - - - - - - - - - -
    CAB004M12GM4

    CAB004M12GM4

    SIC, MODULE, 4M, 1200V, 48 MM, G

    Wolfspeed, Inc.

    18
    RFQ
    CAB004M12GM4

    Tabla de datos

    * - Box Active - - - - - - - - - - - - - - -
    CAB004M12GM4T

    CAB004M12GM4T

    SIC, MODULE, 4M, 1200V, 48 MM, G

    Wolfspeed, Inc.

    18
    RFQ
    CAB004M12GM4T

    Tabla de datos

    * - Box Active - - - - - - - - - - - - - - -
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