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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    FF6MR12KM1PHOSA1

    FF6MR12KM1PHOSA1

    MOSFET 2N-CH 1200V 250A AG-62MM

    Infineon Technologies

    3,550
    RFQ
    FF6MR12KM1PHOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF3MR12KM1PHOSA1

    FF3MR12KM1PHOSA1

    MOSFET 2N-CH 1200V 375A AG-62MM

    Infineon Technologies

    2,341
    RFQ
    FF3MR12KM1PHOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V 29800pF @ 25V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF3MR12KM1HOSA1

    FF3MR12KM1HOSA1

    MOSFET 2N-CH 1200V 375A AG-62MM

    Infineon Technologies

    2,059
    RFQ
    FF3MR12KM1HOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V 29800pF @ 25V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF2MR12KM1PHOSA1

    FF2MR12KM1PHOSA1

    MOSFET 2N-CH 1200V 500A AG-62MM

    Infineon Technologies

    4,273
    RFQ
    FF2MR12KM1PHOSA1

    Tabla de datos

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    IRF40H233ATMA1

    IRF40H233ATMA1

    MOSFET 2N-CH 40V 65A 8TDSON

    Infineon Technologies

    2,585
    RFQ

    -

    StrongIRFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 65A (Tc) 6.2mOhm @ 35A, 10V 3.9V @ 50µA 57nC @ 10V 2200pF @ 20V 3.8W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-4
    F415MR12W2M1B76BOMA1

    F415MR12W2M1B76BOMA1

    MOSFET 4N-CH 1200V 75A AG-EASY1B

    Infineon Technologies

    4,834
    RFQ

    -

    EasyPACK™ CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 75A (Tj) 15mOhm @ 75A, 15V 5.55V @ 30mA 186nC @ 15V 5520pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
    FF11MR12W1M1B70BPSA1

    FF11MR12W1M1B70BPSA1

    MOSFET 2N-CH 1200V AG-EASY1B

    Infineon Technologies

    4,469
    RFQ
    FF11MR12W1M1B70BPSA1

    Tabla de datos

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
    FF6MR12W2M1B70BPSA1

    FF6MR12W2M1B70BPSA1

    MOSFET 2N-CH 1200V AG-EASY2B

    Infineon Technologies

    4,359
    RFQ
    FF6MR12W2M1B70BPSA1

    Tabla de datos

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY2B
    FS03MR12A6MA1LB

    FS03MR12A6MA1LB

    MOSFET 6N-CH 1200V AG-HYBRIDD

    Infineon Technologies

    3,388
    RFQ
    FS03MR12A6MA1LB

    Tabla de datos

    HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 400A 3.7mOhm @ 400A, 15V 5.55V @ 240mA 1320nC @ 15V 42600pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-HYBRIDD-2
    FF45MR12W1M1PB11BPSA1

    FF45MR12W1M1PB11BPSA1

    MOSFET 2N-CH 1200V AG-EASY1BM

    Infineon Technologies

    4,690
    RFQ

    -

    CoolSiC™ Module Tray Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM
    Total 496 Record«Prev1... 454647484950Next»
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