Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PX8746JDNG029XTMA1LED PX8746JDNG029XTMA1 |
3,661 |
|
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SSTPAD20 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
4,995 |
|
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PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
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SICRB20650ADIODE SIL CARBIDE 650V 20A D2PAK |
567 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | - | 100 µA @ 650 V | 1190pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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SCS308APC9DIODE SILICON CARBIDE 650V 8A |
125 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
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1N5818DIODE SCHOTTKY 30V 1A DO15 |
913 |
|
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- | DO-204AC, DO-15, Axial | Bulk | Active | Schottky | 30 V | 1A | 875 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 200 V | - | - | - | Through Hole | DO-204AC (DO-15) | -50°C ~ 150°C |
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JPAD20 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
1,098 |
|
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PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Obsolete | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
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PAD20 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
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PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
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S3D20065GDIODE SIC 650V 20A TO263-2 |
565 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 650 V | 1450pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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NXPSC106506QDIODE SIL CARB 650V 10A TO220AC |
3,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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NXPSC10650X6QDIODE SIL CARB 650V 10A TO220F |
2,995 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
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FFSM0865ADIODE SIL CARB 650V 9.6A 4PQFN |
3,000 |
|
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- | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 9.6A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
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LSIC2SD065A08ADIODE SIL CARB 650V 23A TO220-2L |
1,021 |
|
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Gen2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 415pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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NXPSC10650B6JDIODE SIL CARBIDE 650V 10A D2PAK |
2,290 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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SSTPAD10 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
5,955 |
|
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PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
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FFSB1265ADIODE SIL CARB 650V 14A D2PAK-3 |
670 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -65°C ~ 175°C |
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SSTPAD5 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
3,059 |
|
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PAD | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 0.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
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SICRB12650DIODE SIL CARBIDE 650V 12A D2PAK |
247 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
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CDBDSC10650-GDIODE SIL CARBIDE 650V 10A DPAK |
355 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 690pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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PAD10 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
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PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
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NXPSC126506QDIODE SIL CARB 650V 12A TO220AC |
990 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |