Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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LSIC2SD065D16ADIODE SIL CARBIDE 650V 38A TO263 |
819 |
|
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GEN2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 38A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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PAD20 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
484 |
|
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PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
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SCS212AGHRCDIODE SIL CARB 650V 12A TO220AC |
1,778 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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LSIC2SD065E12CCADIODE SIC 650V 18.5A TO247AD |
500 |
|
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GEN2 | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 18.5A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 300pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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PAD10 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
495 |
|
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PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
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PAD2 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
497 |
|
![]() Tabla de datos |
PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 2 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
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CDBDSC51200-GDIODE SIL CARBIDE 1.2KV 18A DPAK |
411 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 18A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 475pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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IDH10S120AKSA1DIODE SIL CARB 1.2KV 10A TO220-2 |
2,364 |
|
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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RHRU150100DIODE GEN PURP 1KV 150A SOT93 |
265 |
|
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- | TO-218-3 | Bulk | Active | Standard | 1000 V | 150A | 3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 500 µA @ 1000 V | - | - | - | Through Hole | SOT-93 | -65°C ~ 175°C |
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FFSH10120ADIODE SIL CARB 1.2KV 17A TO247-2 |
277 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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FFSH2065ADIODE SIL CARB 650V 25A TO247-2 |
260 |
|
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- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1085pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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S4D30120G0DIODE SCHOTTKY SILICON CARBIDE S |
685 |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-2 | - |
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PCDP10120G1_T0_00001TO-220AC, SIC |
1,984 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
JANTX1N6638DIODE GEN PURP 125V 300MA |
324 |
|
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- | SQ-MELF, D | Bulk | Discontinued at Digi-Key | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 100 µA @ 125 V | - | Military | MIL-PRF-19500/578 & /609 | Surface Mount | D-5D | -65°C ~ 175°C |
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E6D20065GDIODE SIC 650V 68A TO263 |
969 |
|
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E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 68A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1277pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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RURU10060DIODE GEN PURP 600V 100A TO218 |
305 |
|
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- | TO-218-1 | Bulk | Active | Standard | 600 V | 100A | 1.6 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-218 | -65°C ~ 175°C |
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PCDB10120G1_R2_000011200V SIC SCHOTTKY BARRIER DIODE |
2,350 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
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PCDD10120G1_L2_000011200V SIC SCHOTTKY BARRIER DIODE |
2,768 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
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JANTXV1N6642USDIODE GEN PURP 100V 300MA D-5B |
108 |
|
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- | SQ-MELF, E | Bulk | Active | Standard | 100 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 100 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
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IDW30G65C5FKSA1DIODE SIL CARB 650V 30A TO247-3 |
4,214 |
|
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CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |