Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WNSC2D101200WQDIODE SIL CARB 1.2KV 10A TO247-2 |
2,317 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 490pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
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CDBDSC8650-GDIODE SIL CARB 650V 25.5A DPAK |
342 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 550pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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PCDP1665G1_T0_00001TO-220AC, SIC |
2,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 618pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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STPSC10C065RYDIODE SIL CARBIDE 650V 10A I2PAK |
972 |
|
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- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | I2PAK | -40°C ~ 175°C |
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JPAD10 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
2,597 |
|
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PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
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NXPSC08650D6JDIODE SIL CARBIDE 650V 8A DPAK |
7,184 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
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NXPSC086506QDIODE SIL CARB 650V 8A TO220AC |
3,000 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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NXPSC08650X6QDIODE SIL CARBIDE 650V 8A TO220F |
2,926 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
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RHRG5060DIODE GEN PURP 600V 50A TO247-2 |
1,778 |
|
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- | TO-247-2 | Tube | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
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JPAD5 TO-92 2L ROHSDIODE GEN PURP 35V 10MA TO92 |
676 |
|
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PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 0.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
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STPSC12C065DYDIODE SIL CARB 650V 12A TO220AC |
154 |
|
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ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 530pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
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FFSPF0865ADIODE SIC 650V 8A TO220F-2FS |
915 |
|
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
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NXPSC08650B6JDIODE SIL CARBIDE 650V 8A D2PAK |
3,160 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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LSIC2SD065A06ADIODE SIL CARB 650V 18.5A TO220L |
758 |
|
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Gen2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 18.5A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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VS-100BGQ015SCHOTTKY RECT 15V 100A POWLRTAB |
288 |
|
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- | PowerTab™, PowIRtab™ | Bulk | Obsolete | Schottky | 15 V | 100A | 460 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18 mA @ 15 V | - | - | - | Chassis Mount | PowIRtab™ | - |
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JPAD200 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
1,031 |
|
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PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
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CDBJFSC8650-GDIODE SIL CARBIDE 650V 8A TO220F |
479 |
|
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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IDDD12G65C6XTMA1DIODE SIL CARB 650V 34A HDSOP-10 |
3,132 |
|
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CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 34A | - | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 420 V | 594pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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UJ3D06520KSDDIODE SIL CARB 650V 10A TO247-3 |
9,218 |
|
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Gen-III | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 654pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
STTH30S06WDIODE GEN PURP 600V 30A DO247-2 |
521 |
|
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- | DO-247-2 (Straight Leads) | Tube | Obsolete | Standard | 600 V | 30A | 3.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 50 µA @ 600 V | - | - | - | Through Hole | - | -40°C ~ 175°C |