Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SDT08S60DIODE SIL CARB 600V 8A TO220-2-2 |
4,812 |
|
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CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 280pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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PCDP1065G1_T0_00001TO-220AC, SIC |
1,478 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDB1065G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
4,000 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
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IV1D06006P3DIODE SIC 650V 16.7A TO252-3 |
2,481 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3 | -55°C ~ 175°C |
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FFSPF1065ADIODE SIC 650V 10A TO220F-2FS |
930 |
|
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
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PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,797 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
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STPSC1006DDIODE SIL CARB 600V 10A TO220AC |
166 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
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WNSC6D16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
2,665 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
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C6D10065ADIODE SIL CARB 650V 37A TO220-2 |
442 |
|
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Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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STPSC12H065DYDIODE SIL CARB 650V 12A TO220AC |
219 |
|
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ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 600pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
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FFH75H60SDIODE GEN PURP 600V 75A TO247-2 |
1,196 |
|
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- | TO-247-2 | Tube | Obsolete | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
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CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F |
472 |
|
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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UJ3D1210KSDDIODE SIL CARB 1.2KV 5A TO247-3 |
528 |
|
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- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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SSTPAD100 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
6,215 |
|
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PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
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RURU50100DIODE AVALANCHE 1KV 50A TO218 |
2,668 |
|
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- | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 50A | 1.9 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
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JPAD100 TO-92 2L ROHSDIODE GEN PURP 35V 10MA TO92 |
940 |
|
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PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
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PAD100 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
2,990 |
|
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PAD-DFN | 8-VFDFN Exposed Pad | Cut Tape (CT) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
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PCFFS4065AFDIODE SIL CARBIDE 650V 40A DIE |
1,364 |
|
- |
- | Die | Tray | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1989pf @ 1V, 100kHz | - | - | Surface Mount | Die | -55°C ~ 175°C |
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PAD50DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
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PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
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LSIC2SD065C08ADIODE SIL CARB 650V 23A TO252 |
2,288 |
|
![]() Tabla de datos |
Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 415pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |