Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SF3008PTHDIODE GEN PURP 600V 30A TO247AD |
688 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 175pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |
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SDS065J006S3-ISBRHDIODE 650V-6A DFN8*8-4L |
200 |
|
![]() Tabla de datos |
Sanan DFN8 | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 175°C |
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SDS065J008D3-ISARHDIODE 650V-8A TO252-2L |
200 |
|
![]() Tabla de datos |
Sanan TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.3 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 24 µA @ 650 V | - | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
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TRS8E65H,S1QG3 SIC-SBD 650V 8A TO-220-2L |
338 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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FFSD1065BDIODE SIL CARB 650V 13.5A DPAK |
4,116 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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SE30124-M3/I30A,1200V,DO-218AB RECTIFIER |
3,000 |
|
![]() Tabla de datos |
- | DO-218AB | Tape & Reel (TR) | Active | Standard | 1200 V | 4.2A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | 35pF @ 400V, 1MHz | - | - | Surface Mount | DO-218AB | -55°C ~ 175°C |
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VS-20ETF12FP-M3DIODE GP 1.2KV 20A TO220-2FP |
695 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | Standard | 1200 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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BSDD08G65E2DIODE SCHOT SIC 650V 8A TO252 |
5,000 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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SIT10C065DIODE SIL CARB 650V 10A TO220AC |
980 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
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VS-APU3006HN3DIODE GEN PURP 600V 30A TO247AC |
492 |
|
![]() Tabla de datos |
FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AC | -40°C ~ 150°C |
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PCDF0465G1_T0_00601650V/4A THROUGH HOLE SILICON CAR |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 160pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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FFSM0865BDIODE SIL CARB 650V 11.6A 4PQFN |
2,980 |
|
![]() Tabla de datos |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.6A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
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SDS065J008C3-ISATHDIODE 650V-8A TO220-2L |
200 |
|
![]() Tabla de datos |
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 25A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 24 µA @ 650 V | 395pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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VS-20ETF04STRL-M3DIODE GEN PURP 400V 20A TO263AB |
7,894 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 400 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 400 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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PCDD0465GB_L2_00601650V/4A IN TO-252AA PACKAGE SILI |
3,000 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 261pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
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TRS10V65H,LQG3 SIC-SBD 650V 10A DFN8X8 |
3,975 |
|
![]() Tabla de datos |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 649pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
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IDWD30E120D7XKSA1DIODE GEN PURP 1200V 52A TO247-2 |
120 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 52A | 3 V @ 30 A | Fast Recovery =< 500ns, > 5A (Io) | 135 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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D6015L52TPDIODE GP 600V 9.5A ITO220AB |
457 |
|
![]() Tabla de datos |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 9.5A | 1.6 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 10 µA @ 600 V | - | - | - | Through Hole | ITO-220AB | -40°C ~ 125°C |
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SIT12C065DIODE SIL CARB 650V 12A TO220AC |
1,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
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IDWD20E65E7XKSA1HOME APPLIANCES 14 |
220 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 74 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |