Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-3C10EP12L-M310A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division |
500 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-90EPS08L-M3DIODE GEN PURP 800V 90A TO247AD Vishay General Semiconductor - Diodes Division |
465 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 800 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-3C10CP12L-M310A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division |
500 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-90EPF12L-M3DIODE GEN PURP 1.2KV 90A TO247AD Vishay General Semiconductor - Diodes Division |
466 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 90A | 1.38 V @ 90 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-30EPF10-M3DIODE GP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
326 |
|
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- | TO-247-2 | Tube | Active | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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VS-3C10ET12T-M310A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division |
915 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-3C15ET12T-M315A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division |
1,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-1N1183ADIODE GEN PURP 50V 40A DO203AB Vishay General Semiconductor - Diodes Division |
204 |
|
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 50 V | 40A | 1.3 V @ 126 A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5 mA @ 50 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 200°C |
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VS-3C10ET12S2L-M310A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division |
800 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-3C15EP12L-M315A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division |
500 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |