Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-EPU3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
499 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-25ETS08S-M3DIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
7,049 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 800 V | 25A | 1.14 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-20ETF06STRL-M3DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division |
6,202 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-8EWS12STRL-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,900 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 1200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
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VS-8EWS16S-M3DIODE GEN PURP 1.6KV 8A TO252 Vishay General Semiconductor - Diodes Division |
2,906 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 1600 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1600 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-20ETF06THM3DIODE GEN PURP 600V 20A TO220AC Vishay General Semiconductor - Diodes Division |
730 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 150°C |
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VS-20ETS16-M3DIODE GEN PURP 1.6KV 20A TO220-3 Vishay General Semiconductor - Diodes Division |
7,750 |
|
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- | TO-220-3 | Tube | Active | Standard | 1600 V | 20A | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-220-3 | -40°C ~ 150°C |
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VS-3C08EV07T-M3/ISIC-G3-SLIMDPAK 2L Vishay General Semiconductor - Diodes Division |
4,288 |
|
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eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 340pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
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VS-20ETF12FP-M3DIODE GP 1.2KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division |
695 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 1200 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-APU3006HN3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
492 |
|
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FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AC | -40°C ~ 150°C |