Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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VS-MBRB1645-M3DIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
6,699 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Schottky | 45 V | 16A | 630 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 35 V | 1400pF @ 5V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
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VFT3080S-E3/4WDIODE SCHOTTKY 80V 30A TO220-3 Vishay General Semiconductor - Diodes Division |
1,938 |
|
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- | TO-220-3 | Tube | Active | Schottky | 80 V | 30A | 950 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | - | - | - | Through Hole | TO-220-3 | -55°C ~ 150°C |
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BYW76RAS15-10DIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,000 |
|
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- | - | Bulk | Active | Avalanche | 600 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | - | - | - | - | - | -55°C ~ 175°C |
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VS-10ETF06THM3DIODE GEN PURP 600V 10A TO220AC Vishay General Semiconductor - Diodes Division |
407 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 150°C |
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VS-50WQ06FNTRHM3DIODE SCHOTTKY 60V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
1,937 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Schottky | 60 V | 5.5A | 570 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 60 V | 360pF @ 5V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-ETU3006STRR-M3DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
7,905 |
|
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FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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VS-ETH1506STRL-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
5,568 |
|
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FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 15A | 2.45 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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VS-3C04EV07T-M3/ISIC-G3-SLIMDPAK 2L Vishay General Semiconductor - Diodes Division |
4,120 |
|
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eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 175pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
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VS-10ETS10STRR-M3DIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
7,970 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1000 V | 10A | 1.1 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1000 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-10ETF12STRL-M3DIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
6,548 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 10A | 1.33 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 310 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |