Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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VS-20ETF04STRL-M3DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division |
7,894 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 400 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 400 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-35EPF06L-M3DIODE GEN PURP 600V 35A TO247AD Vishay General Semiconductor - Diodes Division |
496 |
|
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- | TO-247-2 | Tube | Active | Standard | 600 V | 35A | 1.46 V @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-65APS16L-M3DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division |
495 |
|
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- | TO-247-3 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-3C10EV07T-M3/ISIC-G3-SLIMDPAK 2L Vishay General Semiconductor - Diodes Division |
4,391 |
|
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eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 445pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
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VS-3C05ET12T-M35A 1200V SIC ZERO QRR SINGLE TJM Vishay General Semiconductor - Diodes Division |
939 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-ETU3006STRLHM3DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
208 |
|
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FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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VS-HFA08PB60-N3DIODE GP 600V 8A TO247AC Vishay General Semiconductor - Diodes Division |
250 |
|
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HEXFRED® | TO-247-2 | Tube | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 5 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
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VS-65EPS16L-M3DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division |
184 |
|
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- | TO-247-2 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-3C05ET12S2L-M35A 1200V SIC ZERO QRR SINGLE TJM Vishay General Semiconductor - Diodes Division |
796 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-65EPF12L-M3DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division |
480 |
|
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- | TO-247-2 | Tube | Active | Standard | 1200 V | 65A | 1.42 V @ 65 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |