Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDM02G120C5XTMA1DIODE SIL CARB 1.2KV 2A TO252-2 Infineon Technologies |
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 175°C |
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IDWD15G120C5XKSA1DIODE SIL CARB 1.2KV 49A TO247-2 Infineon Technologies |
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CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.65 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 124 µA @ 1200 V | 1050pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
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BAS40E6433HTMA1DIODE SCHOTTKY 40V 120MA SOT23 Infineon Technologies |
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Schottky | 40 V | 120mA | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | 100 ps | 1 µA @ 30 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23 | -55°C ~ 150°C |
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IDV08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
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- | TO-220-2 Full Pack | Tube | Active | Standard | 650 V | 8A | 2.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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IDP15E65D1XKSA1DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies |
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- | TO-220-2 | Tube | Active | Standard | 650 V | 15A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 114 ns | 40 µA @ 650 V | - | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |
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IDH08G65C5XKSA2DIODE SIL CARB 650V 8A TO220-2-1 Infineon Technologies |
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDWD10G120C5XKSA1DIODE SIL CARB 1.2KV 34A TO247-2 Infineon Technologies |
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CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 34A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 730pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
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AIDK10S65C5ATMA1DISCRETE DIODES Infineon Technologies |
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CoolSiC™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 303pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | PG-TO263-2 | -40°C ~ 175°C |
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D1600U45X122XPSA1DIODE GP 4.5KV 1560A D12026K-1 Infineon Technologies |
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- | DO-200AE | Tray | Active | Standard | 4500 V | 1560A | 4.3 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 4500 V | - | - | - | Chassis Mount | BG-D12026K-1 | 140°C (Max) |
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D4600U45X172XPSA1DIODE GP 4.5KV 4450A D17226K-1 Infineon Technologies |
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- | DO-200AE | Tray | Active | Standard | 4500 V | 4450A | 2 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 mA @ 4500 V | - | - | - | Chassis Mount | BG-D17226K-1 | 140°C (Max) |