Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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65DN06B02ELEMXPSA1DIODE GP 600V 15130A D-ELEM-1 Infineon Technologies |
19 |
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- | DO-200AC, K-PUK | Bulk | Active | Standard | 600 V | 15130A | 890 mV @ 8000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 600 V | - | - | - | Clamp On | BG-D-ELEM-1 | 180°C (Max) |
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IDH06SG60CXKSA2DIODE SIL CARB 600V 6A TO220-2-1 Infineon Technologies |
37 |
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 6A | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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46DN06B02ELEMXPSA1DIODE GP 600V 10450A D-ELEM-1 Infineon Technologies |
5 |
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![]() Tabla de datos |
- | DO-200AC, K-PUK | Bulk | Active | Standard | 600 V | 10450A | 980 mV @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 600 V | - | - | - | Clamp On | BG-D-ELEM-1 | 180°C (Max) |
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IDYH10G200C5XKSA1SIC DISCRETE Infineon Technologies |
47 |
|
- |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 35A | 1.75 V @ 10 A | - | - | 150 µA @ 2000 V | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
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IDYH25G200C5XKSA1SIC DISCRETE Infineon Technologies |
56 |
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- |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 77A | 1.75 V @ 25 A | - | - | 375 µA @ 2000 V | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
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IDYH40G200C5XKSA1SIC DISCRETE Infineon Technologies |
66 |
|
- |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 114A | 1.75 V @ 40 A | - | - | 600 µA @ 2000 V | 4550pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
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ND89N12KHPSA1DIODE GEN PURP 1.2KV 89A PB20-1 Infineon Technologies |
16 |
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![]() Tabla de datos |
- | Module | Tray | Active | Standard | 1200 V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | - | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
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ND89N16KHPSA1DIODE GEN PURP 1.6KV 89A PB20-1 Infineon Technologies |
11 |
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- | Module | Tray | Active | Standard | 1600 V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | - | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
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D1800N48TVFXPSA1DIODE GEN PURP 4.8KV 1800A Infineon Technologies |
8 |
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![]() Tabla de datos |
- | DO-200AC, K-PUK | Tray | Active | Standard | 4800 V | 1800A | 1.32 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4800 V | - | - | - | Clamp On | - | -40°C ~ 160°C |
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DZ1070N22KHPSA3DIODE GP 2.2KV 1100A MODULE Infineon Technologies |
2 |
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![]() Tabla de datos |
- | Module | Tray | Active | Standard | 2200 V | 1100A | 1.11 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 2200 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |