Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDH08G65C6XKSA1DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies |
36 |
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![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 27 µA @ 420 V | 401pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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IDH12G65C6XKSA1DIODE SIL CARB 650V 27A TO220-2 Infineon Technologies |
74 |
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![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 27A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 420 V | 594pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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D970N06TXPSA1DIODE GEN PURP 600V 970A Infineon Technologies |
2 |
|
![]() Tabla de datos |
- | DO-200AA, A-PUK | Tray | Active | Standard | 600 V | 970A | 970 mV @ 750 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 600 V | - | - | - | Clamp On | - | -40°C ~ 180°C |
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D950N18TXPSA1DIODE GEN PURP 1.8KV 950A Infineon Technologies |
18 |
|
![]() Tabla de datos |
- | DO-200AA, A-PUK | Bulk | Active | Standard | 1800 V | 950A | 1.12 V @ 650 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1800 V | - | - | - | Clamp On | - | -40°C ~ 180°C |
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D1230N18TXPSA1DIODE GEN PURP 1.8KV 1230A Infineon Technologies |
10 |
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![]() Tabla de datos |
- | DO-200AA, A-PUK | Tray | Active | Standard | 1800 V | 1230A | 1.063 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 1800 V | - | - | - | Clamp On | - | -40°C ~ 180°C |
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ND171N18KHPSA2DIODE GEN PURP 1.8KV 171A Infineon Technologies |
8 |
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![]() Tabla de datos |
- | Module | Tray | Active | Standard | 1800 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1800 V | - | - | - | Chassis Mount | - | 150°C |
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38DN06B02ELEMXPSA1DIODE GP 600V 5140A D-ELEM-1 Infineon Technologies |
17 |
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![]() Tabla de datos |
- | DO-200AC, K-PUK | Bulk | Active | Standard | 600 V | 5140A | 960 mV @ 4500 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 600 V | - | - | - | Clamp On | BG-D-ELEM-1 | 180°C (Max) |
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DZ600N18KHPSA1DIODE GEN PURP 1.8KV 600A MODULE Infineon Technologies |
20 |
|
![]() Tabla de datos |
- | Module | Tray | Active | Standard | 1800 V | 600A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1800 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |
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IDP12E120XKSA1DIODE GP 1.2KV 28A TO220-2-2 Infineon Technologies |
63 |
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![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 28A | 2.15 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 100 µA @ 1200 V | - | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |
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DZ435N40KHPSA1DIODE GEN PURP 4KV 700A MODULE Infineon Technologies |
4 |
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![]() Tabla de datos |
- | Module | Tray | Active | Standard | 4000 V | 700A | 1.71 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 4000 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |