Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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D629N44TPRRECTIFIER DIODE MODULE Infineon Technologies |
34 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDD15E60BUMA1DIODE GP 600V 29.2A TO252-3 Infineon Technologies |
14,802 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | Standard | 600 V | 29.2A | 2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 600 V | - | - | - | Surface Mount | PG-TO252-3 | -40°C ~ 175°C |
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IDP23013XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
287,898 |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDH09G65C5XKSA2DIODE SIL CARB 650V 9A TO220-2-1 Infineon Technologies |
2,985 |
|
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CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 650 V | 270pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies |
12,385 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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IDW40G65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
70 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 1140pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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DZ600N12KHPSA1DIODE GEN PURP 1.2KV 735A MODULE Infineon Technologies |
12 |
|
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- | Module | Tray | Active | Standard | 1200 V | 735A | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1200 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |
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DZ600N16KHPSA1DIODE GEN PURP 1.6KV 735A MODULE Infineon Technologies |
15 |
|
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- | Module | Tray | Active | Standard | 1600 V | 735A | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1600 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |
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DZ1070N18KHPSA3DIODE GP 1.8KV 1100A MODULE Infineon Technologies |
2 |
|
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- | Module | Tray | Active | Standard | 1800 V | 1100A | 1.11 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 1800 V | - | - | - | Chassis Mount | Module | -40°C ~ 150°C |
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IDP30E120XKSA1DIODE GP 1.2KV 50A TO220-2-2 Infineon Technologies |
62 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 50A | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 243 ns | 100 µA @ 1200 V | - | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |