Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IDK03G65C5XTMA2DIODE SIL CARB 650V 3A TO263-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.8 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 100pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
![]() |
PX3847DDQG004XUMA1LED PX3847DDQG004XUMA1 Infineon Technologies |
5,000 |
|
![]() Tabla de datos |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
IDP06E60XKSA1DIODE GP 600V 14.7A TO220-2-1 Infineon Technologies |
8,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Bulk | Active | Standard | 600 V | 14.7A | 2 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 50 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | PG-TO220-2-1 | -40°C ~ 175°C |
![]() |
IDL02G65C5XUMA1DIODE SIL CARBIDE 650V 2A VSON-4 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 35 µA @ 650 V | 70pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 175°C |
![]() |
IDV03S60CDIODE SIL CARB 600V 3A TO220-22 Infineon Technologies |
1,500 |
|
![]() Tabla de datos |
thinQ!™ | TO-220-2 Full Pack | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 3A (DC) | 1.9 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 90pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-22 | -55°C ~ 175°C |
![]() |
IDB18E120ATMA1DIODE GEN PURP 1.2KV 31A TO263-3 Infineon Technologies |
0 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 1200 V | 31A | 2.15 V @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | 195 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 150°C |
![]() |
IDD03SG60CXTMA1DIODE SIL CARB 600V 3A TO252-3 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 3A | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
![]() |
IDDD06G65C6XTMA1DIODE SIL CARB 650V 18A HDSOP-10 Infineon Technologies |
543 |
|
![]() Tabla de datos |
CoolSiC™+ | 10-PowerSOP Module | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 18A | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
![]() |
IDK05G65C5XTMA1DIODE SIL CARB 650V 5A TO263-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 830 µA @ 650 V | 160pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
![]() |
IDD05SG60CXTMA2DIODE SIL CARB 600V 5A TO252-3 Infineon Technologies |
5,000 |
|
![]() Tabla de datos |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 5A | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |