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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC080SMA120JS15MOSFET SIC 1200V 80 MOHM 15A SOT |
15 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
TW015Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 15 |
98 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 22mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
MSC017SMA120BMOSFET SIC 1200V 17 MOHM TO-247 |
38 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +22V, -10V | 5280 pF @ 1000 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IDYH50G200C5XKSA1SIC DISCRETE |
75 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF100R12W1T7EB11BPSA1EASY STANDARD |
24 |
|
Tabla de datos |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXTX6N200P3HVMOSFET N-CH 2000V 6A TO247PLUSHV |
15 |
|
Tabla de datos |
Polar P3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 6A (Tc) | 10V | 4Ohm @ 3A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247PLUS-HV |
|
APT50M50JVRMOSFET N-CH 500V 77A ISOTOP |
10 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
APT20M11JVRMOSFET N-CH 200V 175A ISOTOP |
6 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT10025JVRMOSFET N-CH 1000V 34A ISOTOP |
10 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT8011JLLMOSFET N-CH 800V 51A ISOTOP |
8 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT60M60JLLMOSFET N-CH 600V 70A ISOTOP |
10 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT8011JFLLMOSFET N-CH 800V 51A ISOTOP |
10 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 125mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
FF6MR12W2M1HB70BPSA1LOW POWER EASY |
10 |
|
Tabla de datos |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF4MR12W2M1HB70BPSA1LOW POWER EASY |
13 |
|
Tabla de datos |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
EPC7003ASHGAN FET HEMT 100V 10A.045OHM 4UB |
25 |
|
Tabla de datos |
eGaN®, FSMD-A | 4-SMD, No Lead | Bulk | Active | N-Channel, Depletion Mode | GaNFET (Gallium Nitride) | 100 V | 10A (Tc) | 5V | 45mOhm @ 10A, 5V | 2.5V @ 1.4mA | 2.2 nC @ 5 V | +6V, -4V | 233 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
EPC7004BSHGAN FET HEMT |
25 |
|
Tabla de datos |
eGaN®, FSMD-B | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 15mOhm @ 30A, 5V | 2.5V @ 7mA | 11 nC @ 5 V | +6V, -4V | 1000 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-FSMD-B |
|
|
FF1700XTR17IE5DBPSA1PP IHM I |
2 |
|
Tabla de datos |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NVXR22S90M2SPMSIC 900V 6D MOSFET V-SSDC SPM |
4 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N700260V 115MA 7.5@10V,500MA 225MW N |
212 |
|
- |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 225mW | 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
BSS138MOSFET N-CH 50V 220MA SOT23-3 |
517 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | - | ±20V | 50 pF @ 10 V | - | 300mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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