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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPDQ60T022S7AXTMA1AUTOMOTIVE_COOLMOS |
100 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT040W65G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
75 |
|
Tabla de datos |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
TW083Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 83 |
88 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 118mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
APT5015BVFRGMOSFET N-CH 500V 32A TO247 |
40 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
|
DMWSH120H90SM4QSIC MOSFET BVDSS: >1000V TO247-4 |
17 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 47.6 nC @ 15 V | +19V, -8V | 1112 pF @ 1000 V | - | 235W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
AIMCQ120R040M1TXTMA1SIC_DISCRETE |
90 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 61A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +25V, -10V | 1264 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
IPQC60T017S7XTMA1HIGH POWER_NEW |
100 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
|
|
IPDQ60T017S7XTMA1HIGH POWER_NEW |
68 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
|
IPDQ60T017S7AXTMA1AUTOMOTIVE_COOLMOS |
100 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPQC60T017S7AXTMA1AUTOMOTIVE_COOLMOS |
100 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
TM3E0039120ASIC MOSFET |
90 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tray | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
SCT027H65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AIMCQ120R030M1TXTMA1SIC_DISCRETE |
63 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 78A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +25V, -10V | 1738 pF @ 800 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
TM3B0039120ASIC MOSFET |
90 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
MSC040SMA120B4NMOSFET SIC 1200 V 40 MOHM TO-247 |
60 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 71A (Tc) | 18V, 20V | 50mOhm @ 40A, 20V | 5V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1962 pF @ 1000 V | - | 372W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
TW027Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 27 |
80 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 38mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
TW060Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 6 |
88 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
SCT040W120G3AGHIP-247 IN LINE HEAT SINK 2MM |
100 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 56 nC @ 18 V | +22V, -10V | 1329 pF @ 800 V | - | 312W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
|
|
DMWS120H100SM4SIC MOSFET BVDSS: >1000V TO247-4 |
27 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37.2A (Tc) | 15V | 100mOhm @ 20A, 15V | 3.5V @ 5mA | 52 nC @ 15 V | +19V, -8V | 1516 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
STW65N023M9-4N-CHANNEL 650 V, 19.9 MOHM TYP., |
59 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 23mOhm @ 48A, 10V | 4.2V @ 250µA | 230 nC @ 10 V | ±30V | 8844 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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