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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S2M0025120JMOSFET SILICON CARBIDE SIC 1200V |
46 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 177 nC @ 20 V | +25V, -10V | 4150 pF @ 1000 V | - | 311W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
SCT025H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
85 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT018H65G3AGH2PAK-7 |
100 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 27mOhm @ 30A, 18V | 4.2V @ 5mA | 79.4 nC @ 18 V | +22V, -10V | 2124 pF @ 400 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
|
|
S2M0080120NMOSFET SILICON CARBIDE SIC 1200V |
36 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +20V, -5V | 1324 pF @ 1000 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
SCT018W65G3-4AGTO247-4 |
100 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Tc) | 15V, 18V | 27mOhm @ 30A, 18V | 4.2V @ 5mA | 77 nC @ 18 V | +22V, -10V | 2077 pF @ 400 V | - | 398W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
SCT025W120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 |
|
Tabla de datos |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT025W120G3-4AGTO247-4 |
75 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 37mOhm @ 25A, 18V | 4.2V @ 5mA | 73 nC @ 18 V | +18V, -5V | 1990 pF @ 800 V | - | 388W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
MSC015SMA070B4NMOSFET SIC 700 V 15 MOHM TO-247- |
60 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700 V | 112A (Tc) | 18V, 20V | 19mOhm @ 40A, 20V | 5V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4324 pF @ 700 V | - | 524W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
SCT012W90G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 |
|
- |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
S2M0040120N-1MOSFET SILICON CARBIDE SIC 1200V |
36 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
SCT011HU75G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
50 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC017SMA120B4NMOSFET SIC 1200 V 17 MOHM TO-247 |
30 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 119A (Tc) | 18V, 20V | 22mOhm @ 40A, 20V | 5V @ 4.5mA | 194 nC @ 20 V | +23V, -10V | 4274 pF @ 1200 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
MSC025SMA120B4NMOSFET SIC 1200 V 25 MOHM TO-247 |
30 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 113A (Tc) | 18V, 20V | 31mOhm @ 40A, 20V | 5V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3633 pF @ 1000 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
S3M0040120NMOSFET SILICON CARBIDE SIC 1200V |
36 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 483W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
IXTH1N300P3HVMOSFET N-CH 3000V 1A TO247HV |
8 |
|
Tabla de datos |
Polar P3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 1A (Tc) | 10V | 50Ohm @ 500mA, 10V | 4V @ 250µA | 30.6 nC @ 10 V | ±20V | 895 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247HV |
|
|
AIMZHN120R020M1TXKSA1SIC_DISCRETE |
30 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
|
DMWSH120H28SM4QSIC MOSFET BVDSS: >1000V TO247-4 |
38 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 156.3 nC @ 15 V | +19V, -8V | - | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
S2M0025120NMOSFET SILICON CARBIDE SIC 1200V |
34 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 165 nC @ 20 V | +20V, -5V | 4054 pF @ 1000 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
TM3B0020120A1200V 20MOHM SIC MOSFET TO247-4 |
40 |
|
Tabla de datos |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
S3M0016120NMOSFET SILICON CARBIDE SIC 1200V |
36 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 23mOhm @ 75A, 18V | 4V @ 30mA | 287 nC @ 18 V | +22V, -8V | 5251 pF @ 1000 V | - | 732W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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