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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK20N60W,S1VFMOSFET N-CH 600V 20A TO247 |
36 |
|
Tabla de datos |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
AIMCQ120R160M1TXTMA1SIC_DISCRETE |
100 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 18.6A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.5mA | 14 nC @ 20 V | +25V, -10V | 350 pF @ 800 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
SCT055TO65G3SILICON CARBIDE POWER MOSFET 650 |
88 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AIMCQ120R120M1TXTMA1SIC_DISCRETE |
100 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 24A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | +25V, -10V | 458 pF @ 800 V | - | 161W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
IMZC120R078M2HXKSA1IMZC120R078M2HXKSA1 |
90 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 28A (Tc) | 15V, 18V | 78mOhm @ 9A, 18V | 5.1V @ 2.8mA | 21 nC @ 18 V | +23V, -7V | 700 pF @ 800 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
TK31E60W,S1VXMOSFET N-CH 600V 30.8A TO220 |
42 |
|
Tabla de datos |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
PSMN1R1-100CSEJPSMN1R1-100CSE/SOT8005A/CCPAK1 |
46 |
|
Tabla de datos |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 430A (Tc) | 10V | 1.09mOhm @ 25A, 10V | 3.6V @ 1mA | 509 nC @ 10 V | ±20V | 36460 pF @ 50 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
|
IPQC60T040S7AXTMA1AUTOMOTIVE_COOLMOS |
75 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Box | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 780µA | 83 nC @ 12 V | ±20V | 3128 pF @ 300 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
TK35N65W5,S1FMOSFET N-CH 650V 35A TO247 |
30 |
|
Tabla de datos |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
TW107Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 10 |
90 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | 152mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
TK31J60W5,S1VQMOSFET N-CH 600V 30.8A TO3P |
30 |
|
Tabla de datos |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
|
STW65N045M9-4N-CHANNEL 650 V, 39 MOHM TYP., 5 |
90 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 45mOhm @ 28A, 10V | 4.2V @ 250µA | 80 nC @ 10 V | ±30V | 4610 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
SCT040TO65G3SILICON CARBIDE POWER MOSFET 650 |
100 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
TK62N60W5,S1VFPB-F POWER MOSFET TRANSISTOR TO- |
30 |
|
Tabla de datos |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 45mOhm @ 30.9A, 10V | 4.5V @ 3.1mA | 205 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
|
TW140Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 14 |
65 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 18V | 191mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
AIMZH120R080M1TXKSA1SIC_DISCRETE |
17 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +23V, -5V | 671 pF @ 800 V | - | 169W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-11 |
|
|
IPDQ60T022S7XTMA1HIGH POWER_NEW |
100 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPP60R016CM8XKSA1IPP60R016CM8XKSA1 |
23 |
|
- |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 135A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
APT10M19BVRGMOSFET N-CH 100V 75A TO247 |
53 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 6120 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
|
IPQC60T022S7AXTMA1AUTOMOTIVE_COOLMOS |
100 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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