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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTHL190N65S3HFMOSFET N-CH 650V 20A TO247-3 |
44 |
|
Tabla de datos |
FRFET®, SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 430µA | 34 nC @ 10 V | ±30V | 1610 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IXFQ28N60P3MOSFET N-CH 600V 28A TO3P |
63 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 260mOhm @ 14A, 10V | 5V @ 2.5mA | 50 nC @ 10 V | ±30V | 3560 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
TK28N65W5,S1FX35 PB-F POWER MOSFET TRANSISTOR |
48 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
IXTP01N100DMOSFET N-CH 1000V 400MA TO220AB |
90 |
|
Tabla de datos |
Depletion | TO-220-3 | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 400mA (Tc) | 0V | 80Ohm @ 50mA, 0V | 4.5V @ 25µA | 5.8 nC @ 5 V | ±20V | 100 pF @ 25 V | - | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXTH180N10TMOSFET N-CH 100V 180A TO247 |
94 |
|
Tabla de datos |
Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
IXTP80N075L2MOSFET N-CH 75V 80A TO220AB |
32 |
|
Tabla de datos |
Linear L2™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 24mOhm @ 40A, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
IXTH120P065TMOSFET P-CH 65V 120A TO247 |
88 |
|
Tabla de datos |
TrenchP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 65 V | 120A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 250µA | 185 nC @ 10 V | ±15V | 13200 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
TK31N60W5,S1VFMOSFET N-CH 600V 30.8A TO247 |
48 |
|
Tabla de datos |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
IXFA34N65X3MOSFET 34A 650V X3 TO263 |
45 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 100mOhm @ 17A, 10V | 5.2V @ 2.5mA | 29 nC @ 10 V | ±20V | 2025 pF @ 25 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA (IXFA) |
|
|
IXTP6N100D2MOSFET N-CH 1000V 6A TO220AB |
63 |
|
Tabla de datos |
Depletion | TO-220-3 | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 6A (Tc) | - | 2.2Ohm @ 3A, 0V | - | 95 nC @ 5 V | ±20V | 2650 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
MSC080SMA120B4SICFET N-CH 1200V 37A TO247-4 |
94 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IXTP86N20X4MOSFET 200V 86A N-CH ULTRA TO220 |
26 |
|
Tabla de datos |
Ultra X4 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 86A (Tc) | 10V | 13mOhm @ 43A, 10V | 4.5V @ 250µA | 70 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
MSC060SMA070BSICFET N-CH 700V 39A TO247-3 |
79 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 39A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IXFH48N60X3MOSFET ULTRA JCT 600V 48A TO247 |
58 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 2.5mA | 38 nC @ 10 V | ±20V | 2730 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
TW107N65C,S1FG3 650V SIC-MOSFET TO-247 107MO |
68 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | 145mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
TK39A60W,S4VXMOSFET N-CH 600V 38.8A TO220SIS |
54 |
|
Tabla de datos |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
NTH4L060N090SC1SILICON CARBIDE MOSFET, NCHANNEL |
33 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V, 18V | 43mOhm @ 20A, 18V | 4.3V @ 5mA | 87 nC @ 15 V | +22V, -8V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
MSC060SMA070SSICFET N-CH 700V 37A D3PAK |
92 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA (Typ) | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
APT1204R7BFLLGMOSFET N-CH 1200V 3.5A TO247 |
43 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | ±30V | 715 pF @ 25 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
IXFH86N30TMOSFET N-CH 300V 86A TO247AD |
6 |
|
Tabla de datos |
HiPerFET™, Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 86A (Tc) | 10V | 43mOhm @ 43A, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 11300 pF @ 25 V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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