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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT29F100B2MOSFET N-CH 1000V 30A T-MAX |
11 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
TW060N120C,S1FG3 1200V SIC-MOSFET TO-247 60MO |
15 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
GP2T040A120HSIC MOSFET 1200V 40M TO-247-4L |
60 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | 322W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
APT106N60LC6MOSFET N-CH 600V 106A TO264 |
38 |
|
Tabla de datos |
CoolMOS™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
|
APT48M80LMOSFET N-CH 800V 49A TO264 |
82 |
|
Tabla de datos |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 200mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
APT10078BLLGMOSFET N-CH 1000V 14A TO247 |
30 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
|
TW027N65C,S1FG3 650V SIC-MOSFET TO-247 27MOH |
35 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 37mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
|
APT28M120B2MOSFET N-CH 1200V 29A T-MAX |
56 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 29A (Tc) | 10V | 560mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
APT10050LVRGMOSFET N-CH 1000V 21A TO264 |
25 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
MSC040SMA120BSICFET N-CH 1200V 66A TO247-3 |
35 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
GCMX080B120S1-E1SIC 1200V 80M MOSFET SOT-227 |
48 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1336 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
MSC040SMA120SSICFET N-CH 1200V 64A TO268 |
12 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
GCMS080B120S1-E1SIC 1200V 80M MOSFET & 10A SBD S |
37 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1374 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
TW030N120C,S1FG3 1200V SIC-MOSFET TO-247 30MO |
30 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
IXTN40P50PMOSFET P-CH 500V 40A SOT227B |
64 |
|
Tabla de datos |
PolarP™ | SOT-227-4, miniBLOC | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 230mOhm @ 500mA, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
APT5010JVRMOSFET N-CH 500V 44A ISOTOP |
12 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT5010JVFRMOSFET N-CH 500V 44A ISOTOP |
20 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
MSC035SMA170SMOSFET SIC 1700V 35 MOHM TO-268 |
23 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 59A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
IXFN170N30PMOSFET N-CH 300V 138A SOT-227B |
7 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 138A (Tc) | 10V | 18mOhm @ 85A, 10V | 4.5V @ 1mA | 258 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
MMIX1F420N10TMOSFET N-CH 100V 334A 24SMPD |
60 |
|
Tabla de datos |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 334A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 4700 pF @ 10 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
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