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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFH50N50P3MOSFET N-CH 500V 50A TO247AD |
76 |
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Tabla de datos |
HiPerFET™, Polar3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 120mOhm @ 25A, 10V | 5V @ 4mA | 85 nC @ 10 V | ±30V | 4335 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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TK62N60X,S1FMOSFET N-CH 600V 61.8A TO247 |
82 |
|
Tabla de datos |
DTMOSIV-H | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK49N65W5,S1FX35 PB-F POWER MOSFET TRANSISTOR |
30 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 57mOhm @ 24.6A, 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
TK39J60W5,S1VQMOSFET N-CH 600V 38.8A TO3P |
31 |
|
Tabla de datos |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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IMZA65R039M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
83 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A (Tc) | 18V | 50mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +20V, -2V | 1393 pF @ 400 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
TK31Z60X,S1FX35 PB-F POWER MOSFET TRANSISTOR |
26 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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TK49N65W,S1FPB-F POWER MOSFET TRANSISTOR TO2 |
6 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 55mOhm @ 24.6A, 10V | 3.5V @ 2.5mA | 160 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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APT20M38BVRGMOSFET N-CH 200V 67A TO247 |
44 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT56F50B2MOSFET N-CH 500V 56A T-MAX |
58 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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IXTQ88N30PMOSFET N-CH 300V 88A TO3P |
43 |
|
Tabla de datos |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
MSC080SMA120SSICFET N-CH 1200V 35A D3PAK |
24 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
IXTT48P20PMOSFET P-CH 200V 48A TO268 |
92 |
|
Tabla de datos |
PolarP™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFX98N50P3MOSFET N-CH 500V 98A PLUS247-3 |
64 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 98A (Tc) | 10V | 50mOhm @ 500mA, 10V | 5V @ 8mA | 197 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
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APT5014BLLGMOSFET N-CH 500V 35A TO247 |
41 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 3261 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC035SMA070SMOSFET N-CH 700V D3PAK |
68 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 1mA | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 206W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT106N60B2C6MOSFET N-CH 600V 106A T-MAX |
38 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
TW048N65C,S1FG3 650V SIC-MOSFET TO-247 48MOH |
29 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 65mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | 175°C | - | - | Through Hole | TO-247 |
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TK62Z60X,S1FX35 PB-F POWER MOSFET TRANSISTOR |
11 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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APT5010LVRGMOSFET N-CH 500V 47A TO264 |
19 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
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IXTT40N50L2MOSFET N-CH 500V 40A TO268 |
47 |
|
Tabla de datos |
Linear L2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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