制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
E3M0040120KSIC, MOSFET, 40M, 1200V, TO-247- |
78 | - |
|
![]() Tabla de datos |
E | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A (Tc) | 15V | 53mOhm @ 31.9A, 15V | 3.6V @ 8.77mA | 94 nC @ 15 V | +19V, -8V | 2726 pF @ 1000 V | - | 242W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
![]() |
IXFN200N10PMOSFET N-CH 100V 200A SOT-227B |
94 | - |
|
![]() Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 7.5mOhm @ 500mA, 10V | 5V @ 8mA | 235 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
![]() |
IXTX20N150MOSFET N-CH 1500V 20A PLUS247-3 |
30 | - |
|
![]() Tabla de datos |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 20A (Tc) | 10V | 1Ohm @ 10A, 10V | 4.5V @ 1mA | 215 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
![]() |
MSC080SMA120JSICFET N-CH 1.2KV 35A SOT227 |
56 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
![]() |
GCMX040B120S1-E1SIC 1200V 40M MOSFET SOT-227 |
100 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 121 nC @ 20 V | +25V, -10V | 3185 pF @ 1000 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
![]() |
APT5010JVRU2MOSFET N-CH 500V 44A SOT227 |
20 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312 nC @ 10 V | ±30V | 7410 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
MSC015SMA070B4TRANS SJT N-CH 700V 140A TO247-4 |
45 | - |
|
![]() Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 140A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
![]() |
IXFN90N85XMOSFET N-CH 850V 90A SOT227B |
19 | - |
|
![]() Tabla de datos |
HiPerFET™, Ultra X | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 90A (Tc) | 10V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 340 nC @ 10 V | ±30V | 13300 pF @ 25 V | - | 1200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
![]() |
IXTH1N450HVMOSFET N-CH 4500V 1A TO247HV |
66 | - |
|
![]() Tabla de datos |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1A (Tc) | 10V | 80Ohm @ 50mA, 10V | 6V @ 250µA | 46 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247HV |
![]() |
APT8030JVFRMOSFET N-CH 800V 25A ISOTOP |
21 | - |
|
![]() Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
![]() |
APT40M70JVRMOSFET N-CH 400V 53A SOT227 |
40 | - |
|
- |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | ±30V | 8890 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
![]() |
GCMX020B120S1-E1SIC 1200V 20M MOSFET SOT-227 |
30 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 28mOhm @ 50A, 20V | 4V @ 20mA | 216 nC @ 20 V | +25V, -10V | 5349 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
![]() |
APT10045JLLMOSFET N-CH 1000V 21A ISOTOP |
20 | - |
|
![]() Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
![]() |
STE145N65M5MOSFET N-CH 650V 143A ISOTOP |
88 | - |
|
![]() Tabla de datos |
MDmesh™ V | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 143A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414 nC @ 10 V | ±25V | 18500 pF @ 100 V | - | 679W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
![]() |
MSC100SM70JCU2SICFET N-CH 700V 124A SOT227 |
8 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
![]() |
APT60M60JFLLMOSFET N-CH 600V 70A ISOTOP |
10 | - |
|
![]() Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
![]() |
EPC7018GSHGAN FET HEMT 100V 90A 5UB |
10 | - |
|
![]() Tabla de datos |
eGaN® | 5-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 80A (Tc) | 5V | 6mOhm @ 40A, 5V | 2.5V @ 12mA | 11.7 nC @ 5 V | +6V, -4V | 1240 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-SMD |
![]() |
DMN53D0LT-7DIODE |
659 | - |
|
![]() Tabla de datos |
- | SOT-523 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 350mA (Ta) | 2.5V, 10V | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 46 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-523 |
![]() |
SI3134KWA-TPN-CHANNEL MOSFET,SOT-323 |
963 | - |
|
![]() Tabla de datos |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 750mA | 1.8V, 4.5V | 300mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 0.8 nC @ 4.5 V | ±12V | 33 pF @ 16 V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-323 |
![]() |
DMN2710UTQ-7MOSFET BVDSS: 8V~24V SOT523 T&R |
942 | - |
|
![]() Tabla de datos |
- | SOT-523 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 870mA (Ta) | 1.8V, 4.5V | 450mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | ±6V | 42 pF @ 16 V | - | 320mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-523 |