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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW26NM60NN-channel 600 V, 0.135 Ohm typ., |
68 |
|
Tabla de datos |
MDmesh™ II | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
GS61008T-MRGS61008T-MR |
96 |
|
- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 1.3V @ 7mA | 12 nC @ 6 V | +7V, -10V | 590 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
IXFH50N60P3MOSFET N-CH 600V 50A TO247AD |
66 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
|
IXFH150N25X3MOSFET N-CH 250V 150A TO247 |
48 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
APT30M85BVRGMOSFET N-CH 300V 40A TO247 |
80 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4950 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
TK040N65Z,S1FMOSFET N-CH 650V 57A TO247 |
76 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
TW140N120C,S1FG3 1200V SIC-MOSFET TO-247 140M |
70 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 18V | 182mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
|
TK042N65Z5,S1F(S650V DTMOS6 HSD 42MOHM TO-247 |
86 |
|
Tabla de datos |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 42mOhm @ 27.5A, 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | ±30V | 6280 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
|
STW26NM50MOSFET N-CH 500V 30A TO247-3 |
57 |
|
Tabla de datos |
MDmesh™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 120mOhm @ 13A, 10V | 5V @ 250µA | 106 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 313W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
APT1001RBVRGMOSFET N-CH 1000V 11A TO247 |
37 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
IXFT80N65X2HVMOSFET N-CH 650V 80A TO268HV |
78 |
|
Tabla de datos |
HiPerFET™, Ultra X2 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | - | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
|
|
APT6025BVRGMOSFET N-CH 600V 25A TO247 |
71 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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IXKH47N60CMOSFET N-CH 600V 47A TO247AD |
30 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 4V @ 2mA | 650 nC @ 10 V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
IMLT65R020M2HXTMA1SILICON CARBIDE MOSFET |
39 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXTT110N10L2MOSFET N-CH 100V 110A TO268 |
46 |
|
Tabla de datos |
Linear L2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 18mOhm @ 55A, 10V | 4.5V @ 250µA | 260 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
APT37M100LMOSFET N-CH 1000V 37A TO264 |
25 |
|
Tabla de datos |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
|
|
TW045Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 4 |
50 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 62mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
AIMW120R045M1XKSA1SICFET N-CH 1200V 52A TO247-3 |
35 |
|
Tabla de datos |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | - | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 57 nC @ 15 V | +20V, -7V | 2130 pF @ 800 V | - | 228W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
|
TW045N120C,S1FG3 1200V SIC-MOSFET TO-247 45MO |
71 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 59mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
|
IPDQ60R007CM8XTMA1IPDQ60R007CM8XTMA1 |
15 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 288A (Tc) | 10V | 7mOhm @ 100A, 10V | 4.7V @ 3.24mA | 370 nC @ 10 V | ±20V | 16385 pF @ 400 V | - | 1.249kW (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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