制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IXFH96N20PMOSFET N-CH 200V 96A TO247AD IXYS |
29 | - |
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HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 4mA | 145 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFT70N20Q3MOSFET N-CH 200V 70A TO268 IXYS |
30 | - |
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HiPerFET™, Q3 Class | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 70A (Tc) | 10V | 40mOhm @ 35A, 10V | 6.5V @ 4mA | 67 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFT50N30Q3MOSFET N-CH 300V 50A TO268 IXYS |
30 | - |
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HiPerFET™, Q3 Class | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 6.5V @ 4mA | 65 nC @ 10 V | ±20V | 3165 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFT30N50Q3MOSFET N-CH 500V 30A TO268 IXYS |
30 | - |
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HiPerFET™, Q3 Class | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 6.5V @ 4mA | 62 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFX80N50PMOSFET N-CH 500V 80A PLUS247-3 IXYS |
30 | - |
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HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 5V @ 8mA | 197 nC @ 10 V | ±30V | 12700 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXTK140N30PMOSFET N-CH 300V 140A TO264 IXYS |
14 | - |
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Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 140A (Tc) | 10V | 24mOhm @ 70A, 10V | 5V @ 500µA | 185 nC @ 10 V | ±20V | 14800 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 (IXTK) |
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IXFX48N60Q3MOSFET N-CH 600V 48A PLUS247-3 IXYS |
38 | - |
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HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 140mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFK64N50Q3MOSFET N-CH 500V 64A TO264AA IXYS |
23 | - |
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HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFK48N60Q3MOSFET N-CH 600V 48A TO264AA IXYS |
6 | - |
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HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 140mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXTT60N20L2MOSFET N-CH 200V 60A TO268 IXYS |
33 | - |
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Linear L2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |