制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IXFP7N100PMOSFET N-CH 1000V 7A TO220AB IXYS |
300 | - |
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HiPerFET™, Polar | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 6V @ 1mA | 47 nC @ 10 V | ±30V | 2590 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFP8N85XMOSFET N-CH 850V 8A TO220AB IXYS |
278 | - |
|
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HiPerFET™, Ultra X | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5.5V @ 250µA | 17 nC @ 10 V | ±30V | 654 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB (IXFP) |
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IXFP34N65X2MMOSFET N-CH 650V 34A TO220 IXYS |
275 | - |
|
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HiPerFET™, Ultra X2 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 100mOhm @ 17A, 10V | 5V @ 1.5mA | 56 nC @ 10 V | ±30V | 3230 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
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IXFH34N50P3MOSFET N-CH 500V 34A TO247AD IXYS |
292 | - |
|
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HiPerFET™, Polar3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 34A (Tc) | 10V | 170mOhm @ 17A, 10V | 5V @ 4mA | 60 nC @ 10 V | ±30V | 3260 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFP36N20X3MMOSFET N-CH 200V 36A TO220 IXYS |
292 | - |
|
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HiPerFET™, Ultra X3 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 36A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 500µA | 21 nC @ 10 V | ±20V | 1425 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
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IXTA50N20PMOSFET N-CH 200V 50A TO263 IXYS |
297 | - |
|
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Polar | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 60mOhm @ 50A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±20V | 2720 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXFP16N50P3MOSFET N-CH 500V 16A TO220AB IXYS |
183 | - |
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HiPerFET™, Polar3™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 360mOhm @ 8A, 10V | 5V @ 2.5mA | 29 nC @ 10 V | ±30V | 1515 pF @ 25 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFH12N120PMOSFET N-CH 1200V 12A TO247AD IXYS |
298 | - |
|
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HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.35Ohm @ 500mA, 10V | 6.5V @ 1mA | 103 nC @ 10 V | ±30V | 5400 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFX24N100Q3MOSFET N-CH 1000V 24A PLUS247-3 IXYS |
300 | - |
|
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HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFK32N80Q3MOSFET N-CH 800V 32A TO264AA IXYS |
442 | - |
|
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HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |