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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8M80KMOSFET N-CH 800V 8A TO220 Microsemi Corporation |
3,729 | - |
|
Tabla de datos |
POWER MOS 8™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 1.35Ohm @ 4A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1335 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
|
JANTX2N6804MOSFET P-CH 100V 11A TO204AA Microsemi Corporation |
2,969 | - |
|
Tabla de datos |
- | TO-204AA, TO-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Tc) | 10V | 360mOhm @ 11A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | - | - | 4W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Military | MIL-PRF-19500/562 | Through Hole | TO-204AA |
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APT30N60KC6MOSFET N-CH 600V 30A TO220 Microsemi Corporation |
2,451 | - |
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- |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | - | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | - | 2267 pF @ 25 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
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APT47N65BC3GMOSFET N-CH 650V 47A TO247 Microsemi Corporation |
2,512 | - |
|
- |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT94N65B2C3GMOSFET N-CH 650V 94A T-MAX Microsemi Corporation |
3,205 | - |
|
- |
CoolMOS™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 94A (Tc) | 10V | 35mOhm @ 47A, 10V | 3.9V @ 5.8mA | 580 nC @ 10 V | ±20V | 13940 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APTC90DAM60T1GMOSFET N-CH 900V 59A SP1 Microsemi Corporation |
4,645 | - |
|
- |
CoolMOS™ | SP1 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540 nC @ 10 V | ±20V | 13600 pF @ 100 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APT38N60SC6MOSFET N-CH 600V 38A D3PAK Microsemi Corporation |
4,119 | - |
|
Tabla de datos |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112 nC @ 10 V | ±20V | 2826 pF @ 25 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT33N90JCCU2MOSFET N-CH 900V 33A SOT227 Microsemi Corporation |
3,130 | - |
|
- |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 33A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APTC90DAM60CT1GMOSFET N-CH 900V 59A SP1 Microsemi Corporation |
4,294 | - |
|
- |
CoolMOS™ | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540 nC @ 10 V | ±20V | 13600 pF @ 100 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APT12067B2LLGMOSFET N-CH 1200V 18A T-MAX Microsemi Corporation |
4,080 | - |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | ±30V | 4420 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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