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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT6017LFLLGMOSFET N-CH 600V 35A TO264 Microsemi Corporation |
15 | - |
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Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT20N60BC3GMOSFET N-CH 600V 20.7A TO247-3 Microsemi Corporation |
2,273 | - |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2440 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT17N80BC3GMOSFET N-CH 800V 17A TO247-3 Microsemi Corporation |
4,859 | - |
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Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT20N60SC3GMOSFET N-CH 600V 20.7A D3PAK Microsemi Corporation |
3,300 | - |
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Tabla de datos |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2440 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT17N80SC3GMOSFET N-CH 800V 17A D3PAK Microsemi Corporation |
4,738 | - |
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Tabla de datos |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT9F100SMOSFET N-CH 1000V 9A D3PAK Microsemi Corporation |
3,082 | - |
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Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2606 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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MSC280SMA120SSICFET N-CH 1.2KV D3PAK Microsemi Corporation |
2,474 | - |
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Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT5020SVRGMOSFET N-CH 500V 26A D3PAK Microsemi Corporation |
2,976 | - |
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- |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT30M85BVFRGMOSFET N-CH 300V 40A TO247 Microsemi Corporation |
2,624 | - |
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Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4950 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT34F60BGMOSFET N-CH 600V 34A TO247-3 Microsemi Corporation |
3,736 | - |
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POWER MOS 8™ | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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