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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUFA75343P3MOSFET N-CH 55V 75A TO220-3 Fairchild Semiconductor |
643 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQI2P25TUMOSFET P-CH 250V 2.3A I2PAK Fairchild Semiconductor |
1,000 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.3A (Tc) | 10V | 4Ohm @ 1.15A, 10V | 5V @ 250µA | 8.5 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
|
FQI3P20TUMOSFET P-CH 200V 2.8A I2PAK Fairchild Semiconductor |
1,000 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 2.8A (Tc) | 10V | 2.7Ohm @ 1.4A, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
FQB16N25CTMMOSFET N-CH 250V 15.6A D2PAK Fairchild Semiconductor |
845 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 15.6A (Tc) | 10V | 270mOhm @ 7.8A, 10V | 4V @ 250µA | 53.5 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 3.13W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
NDB7052LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
800 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 5V, 10V | 7.5mOhm @ 37.5A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 4030 pF @ 25 V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQAF44N08MOSFET N-CH 80V 35.6A TO3PF Fairchild Semiconductor |
720 |
|
Tabla de datos |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 35.6A (Tc) | 10V | 34mOhm @ 17.8A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1430 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
|
|
FQAF19N20MOSFET N-CH 200V 15A TO3PF Fairchild Semiconductor |
684 |
|
Tabla de datos |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 15A (Tc) | 10V | 150mOhm @ 7.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
|
FQPF5N80MOSFET N-CH 800V 2.8A TO220F Fairchild Semiconductor |
610 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.8A (Tc) | 10V | 2.6Ohm @ 1.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
|
FQI5N80TUMOSFET N-CH 800V 4.8A I2PAK Fairchild Semiconductor |
993 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.8A (Tc) | 10V | 2.6Ohm @ 2.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
|
SSS6N70AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
950 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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