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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF76143S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
706 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 5.5mOhm @ 75A, 10V | 3V @ 250µA | 114 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 225W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
|
|
FQB16N15TMMOSFET N-CH 150V 16.4A D2PAK Fairchild Semiconductor |
959 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.4A (Tc) | 10V | 160mOhm @ 8.2A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 910 pF @ 25 V | - | 3.75W (Ta), 108W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQP2N80MOSFET N-CH 800V 2.4A TO220-3 Fairchild Semiconductor |
900 |
|
Tabla de datos |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.4A (Tc) | 10V | 6.3Ohm @ 1.2A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
SSW7N60BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
697 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 1.2Ohm @ 3.5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 3.13W (Ta), 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
SFI9510TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
950 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.6A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±30V | 335 pF @ 25 V | - | 3.8W (Ta), 32W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
FQB5N60TMMOSFET N-CH 600V 5A D2PAK Fairchild Semiconductor |
910 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 730 pF @ 25 V | - | 3.13W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
HUF75631SK8T_NB82083N CHANNEL ULTRAFET 100V, 33A, 4 Fairchild Semiconductor |
651 |
|
Tabla de datos |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.5A (Ta) | 10V | 39mOhm @ 5.5A, 10V | 4V @ 250µA | 79 nC @ 20 V | ±20V | 1225 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SSS10N60BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
470 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tj) | 10V | 800mOhm @ 4.5A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
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FDU6512AMOSFET N-CH 20V 10.7A/36A IPAK Fairchild Semiconductor |
834 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 10.7A (Ta), 36A (Tc) | 2.5V, 4.5V | 21mOhm @ 10.7A, 4.5V | 1.5V @ 250µA | 19 nC @ 4.5 V | ±12V | 1082 pF @ 10 V | - | 3.8W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
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SFP9640LMOSFET P-CH 200V 11A TO220-3 Fairchild Semiconductor |
760 |
|
Tabla de datos |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 5V | 500mOhm @ 5.5A, 5V | 2V @ 250µA | 59 nC @ 5 V | ±20V | 1585 pF @ 25 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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