制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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SCT4026DEHRC11750V, 56A, 3-PIN THD, TRENCH-STR Rohm Semiconductor |
320 | - |
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![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT4026DEC11750V, 26M, 3-PIN THD, TRENCH-STR Rohm Semiconductor |
4,887 | - |
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![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | - | - | Through Hole | TO-247N |
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SCT2160KEHRC111200V, 22A, THD, SILICON-CARBIDE Rohm Semiconductor |
374 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT4026DW7HRTL750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
995 | - |
|
![]() Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 150W | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7L |
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SCT4026DW7TL750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
988 | - |
|
![]() Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tj) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 150W | 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
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SCT3060ALHRC11SICFET N-CH 650V 39A TO247N Rohm Semiconductor |
440 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT2080KEHRC11SICFET N-CH 1200V 40A TO247N Rohm Semiconductor |
16,500 | - |
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![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT3030AW7TLSICFET N-CH 650V 70A TO263-7 Rohm Semiconductor |
432 | - |
|
![]() Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | - | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 267W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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SCT3040KW7TLSICFET N-CH 1200V 56A TO263-7 Rohm Semiconductor |
986 | - |
|
![]() Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | - | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 267W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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SCT3030ALHRC11SICFET N-CH 650V 70A TO247N Rohm Semiconductor |
445 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |