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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6030JNZ4C13MOSFET N-CH 600V 30A TO247G Rohm Semiconductor |
391 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74 nC @ 15 V | ±30V | 2500 pF @ 100 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247G |
|
SCT4045DW7TL750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
424 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 31A (Tj) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 93W | 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
|
SCT3160KW7TLSICFET N-CH 1200V 17A TO263-7 Rohm Semiconductor |
3,872 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | - | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | 100W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
SCT4062KW7TL1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor |
904 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tj) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 93W | 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
|
SCT4045DW7HRTL750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
989 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 31A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 93W | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7L |
|
|
SCT3060AW7TLSICFET N-CH 650V 38A TO263-7 Rohm Semiconductor |
1,175 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | - | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 159W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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|
SCT4045DRHRC15750V, 34A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
492 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 115W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
SCT3105KLHRC11SICFET N-CH 1200V 24A TO247N Rohm Semiconductor |
241 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
|
SCT4062KRHRC151200V, 26A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
401 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
SCT3080AW7TLSICFET N-CH 650V 29A TO263-7 Rohm Semiconductor |
905 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | - | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 125W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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