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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RJ1L12CGNTLLNCH 60V 120A POWER MOSFET: RJ1L1 Rohm Semiconductor |
1,000 | - |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 50A, 10V | 2.5V @ 200µA | 139 nC @ 10 V | ±20V | 7100 pF @ 30 V | - | 166W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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R6050JNZC17MOSFET N-CH 600V 50A TO3PF Rohm Semiconductor |
189 | - |
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Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 15V | 83mOhm @ 25A, 15V | 7V @ 5mA | 120 nC @ 15 V | ±30V | 4500 pF @ 100 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6024KNZC17MOSFET N-CH 600V 24A TO3PF Rohm Semiconductor |
300 | - |
|
Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6024ENZC17MOSFET N-CH 600V 24A TO3PF Rohm Semiconductor |
300 | - |
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Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6524KNZC17MOSFET N-CH 650V 24A TO3 Rohm Semiconductor |
300 | - |
|
Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45 nC @ 10 V | ±20V | 1850 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6524ENZC17MOSFET N-CH 650V 24A TO3 Rohm Semiconductor |
300 | - |
|
Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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RSJ650N10TLMOSFET N-CH 100V 65A LPTS Rohm Semiconductor |
908 | - |
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Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Ta) | 4V, 10V | 9.1mOhm @ 32.5A, 10V | 2.5V @ 1mA | 260 nC @ 10 V | ±20V | 10780 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6035VNX3C16600V 35A TO-220AB, PRESTOMOS WIT Rohm Semiconductor |
555 | - |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V, 15V | 114mOhm @ 8A, 15V | 6.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 100 V | - | 347W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RJ1L12BGNTLLNCH 60V 120A POWER MOSFET : RJ1L Rohm Semiconductor |
1,993 | - |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 2.9mOhm @ 40A, 10V | 2.5V @ 500µA | 175 nC @ 10 V | ±20V | 9000 pF @ 30 V | - | 192W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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R6535KNX3C16650V 35A, TO-220AB, HIGH-SPEED S Rohm Semiconductor |
1,000 | - |
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Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 5V @ 1.3mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 370W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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