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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCT2280KEHRC111200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor |
410 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 400 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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R6050JNZ4C13MOSFET N-CH 600V 50A TO247G Rohm Semiconductor |
531 | - |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 15V | 83mOhm @ 25A, 15V | 7V @ 5mA | 120 nC @ 15 V | ±30V | 4500 pF @ 100 V | - | 615W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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SCT3080ALHRC11SICFET N-CH 650V 30A TO247N Rohm Semiconductor |
448 | - |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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R6077VNZ4C13600V 77A TO-247, PRESTOMOS WITH Rohm Semiconductor |
1,148 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V, 15V | 51mOhm @ 23A, 15V | 6.5V @ 1.9mA | 108 nC @ 10 V | ±30V | 5200 pF @ 100 V | - | 781W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT4045DEC11750V, 45M, 3-PIN THD, TRENCH-STR Rohm Semiconductor |
4,201 | - |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 14600 pF @ 500 V | - | 115W | 175°C (TJ) | - | - | Through Hole | TO-247N |
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R6076ENZ4C13MOSFET N-CH 600V 76A TO247 Rohm Semiconductor |
463 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 4V @ 1mA | 260 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 735W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6576ENZ4C13650V 76A TO-247, LOW-NOISE POWER Rohm Semiconductor |
548 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Ta) | 10V | 46mOhm @ 44.4A, 10V | 4V @ 2.96mA | 260 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 735W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6576KNZ4C13650V 76A TO-247, HIGH-SPEED SWIT Rohm Semiconductor |
300 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 46mOhm @ 44.4A, 10V | 5V @ 2.96mA | 165 nC @ 10 V | ±20V | 7400 pF @ 25 V | - | 735W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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SCT3080KW7TLSICFET N-CH 1200V 30A TO263-7 Rohm Semiconductor |
785 | - |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | - | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 159W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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SCT4026DRHRC15750V, 56A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
460 | - |
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Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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