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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6055VNXC7G600V 23A TO-220FM, PRESTOMOS WIT Rohm Semiconductor |
1,013 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V, 15V | 71mOhm @ 16A, 15V | 6.5V @ 1.5mA | 80 nC @ 10 V | ±30V | 3700 pF @ 100 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6035KNZC17MOSFET N-CH 600V 35A TO3PF Rohm Semiconductor |
277 | - |
|
Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 102W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6035ENZC17MOSFET N-CH 600V 35A TO3PF Rohm Semiconductor |
266 | - |
|
Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 4V @ 1mA | 110 nC @ 10 V | ±20V | 2720 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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R6024ENJTLMOSFET N-CH 600V 24A LPTS Rohm Semiconductor |
821 | - |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6015ENXC7G600V 15A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
1,000 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6515ENXC7G650V 15A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
1,000 | - |
|
Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 4V @ 430µA | 40 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6030KNXMOSFET N-CH 600V 30A TO220FM Rohm Semiconductor |
490 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6030JNXC7GMOSFET N-CH 600V 30A TO220FM Rohm Semiconductor |
1,573 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74 nC @ 15 V | ±30V | 2500 pF @ 100 V | - | 95W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6020JNZ4C13MOSFET N-CH 600V 20A TO247G Rohm Semiconductor |
355 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45 nC @ 15 V | ±30V | 1500 pF @ 100 V | - | 252W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247G |
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R8005ANJGTLNCH 800V 5A POWER MOSFET : R8005 Rohm Semiconductor |
1,984 | - |
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Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 2.1Ohm @ 2.5A, 10V | 5V @ 1mA | 20 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263S |
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