Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT5020SVFRGMOSFET N-CH 500V 26A D3PAK Microchip Technology |
4,198 | - |
|
Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | - | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
|
APT13F120SMOSFET N-CH 1200V 14A D3PAK Microchip Technology |
2,886 | - |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 14A (Tc) | 10V | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 4765 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
APT24M80SMOSFET N-CH 800V 25A D3PAK Microchip Technology |
2,840 | - |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
APT1204R7SFLLGMOSFET N-CH 1200V 3.5A D3PAK Microchip Technology |
2,277 | - |
|
Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3.5A (Tc) | - | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | - | 715 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
|
APT20M45SVRGMOSFET N-CH 200V 56A D3PAK Microchip Technology |
2,415 | - |
|
Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | - | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | - | 4860 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
|
APT20M38SVRG/TRMOSFET N-CH 200V 67A D3PAK Microchip Technology |
4,530 | - |
|
Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 33.5A, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
APT1003RSFLLGMOSFET N-CH 1000V 4A D3PAK Microchip Technology |
4,135 | - |
|
- |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | - | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | - | 694 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
APT20M45BVFRGMOSFET N-CH 200V 56A TO247 Microchip Technology |
4,885 | - |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4860 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
APT1201R6BVRGMOSFET N-CH 1200V 8A TO-247 Microchip Technology |
4,607 | - |
|
- |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT6030BVRGMOSFET N-CH 600V 21A TO247 Microchip Technology |
2,457 | - |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 300mOhm @ 10.5A, 10V | 4V @ 1mA | 150 nC @ 10 V | - | 3750 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
