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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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APT5018SFLLG/TRMOSFET N-CH 500V 27A D3PAK Microchip Technology |
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Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT34M60BMOSFET N-CH 600V 36A TO247 Microchip Technology |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT75M50B2MOSFET N-CH 500V 75A T-MAX Microchip Technology |
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Tabla de datos |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ |
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APT5020SVFRG/TRMOSFET N-CH 500V 26A D3PAK Microchip Technology |
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Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 4440 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT43M60B2MOSFET N-CH 600V 45A T-MAX Microchip Technology |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT5015BVRGMOSFET N-CH 500V 32A TO247 Microchip Technology |
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Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT43F60LMOSFET N-CH 600V 45A TO264 Microchip Technology |
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Tabla de datos |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT31M100B2MOSFET N-CH 1000V 32A T-MAX Microchip Technology |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT8065BVRGMOSFET N-CH 800V 13A TO247 Microchip Technology |
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Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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APT1003RSFLLG/TRMOSFET N-CH 1KV 4A D3PAK Microchip Technology |
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Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | ±30V | 694 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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