制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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APT20M20LFLLGMOSFET N-CH 200V 100A TO264 |
3,803 | - |
|
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POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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IXFE39N90MOSFET N-CH 900V 34A SOT227B |
2,907 | - |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 34A (Tc) | 10V | 220mOhm @ 19.5A, 10V | 5V @ 8mA | 375 nC @ 10 V | ±20V | 13400 pF @ 25 V | - | 580W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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APT58M50JCU2MOSFET N-CH 500V 58A SOT227 |
4,127 | - |
|
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POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GA20SICP12-247TRANS SJT 1200V 45A TO247AB |
3,912 | - |
|
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- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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IXTK20N150MOSFET N-CH 1500V 20A TO264 |
2,178 | - |
|
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- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 20A (Tc) | 10V | 1Ohm @ 10A, 10V | 4.5V @ 1mA | 215 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
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APT1201R5BVRGMOSFET N-CH 1200V 10A TO247 |
3,159 | - |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 10A (Tc) | 10V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 28 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247-3 |
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APT30M40JVRMOSFET N-CH 300V 70A ISOTOP |
4,258 | - |
|
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POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT5010JVRU3MOSFET N-CH 500V 44A SOT227 |
3,814 | - |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312 nC @ 10 V | ±30V | 7410 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT29F80JMOSFET N-CH 800V 31A ISOTOP |
4,295 | - |
|
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POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | ±30V | 9326 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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MKE38P600LB-TUBMOSFET N-CH 600V 50A SMPD |
2,034 | - |
|
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- | 9-SMD Module | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | ISOPLUS-SMPD™.B |
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APT22F100JMOSFET N-CH 1000V 23A ISOTOP |
4,285 | - |
|
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POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 380mOhm @ 18A, 10V | - | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT5010JLLMOSFET N-CH 500V 41A ISOTOP |
4,322 | - |
|
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POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | - | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | - | 4360 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT12057B2LLGMOSFET N-CH 1200V 22A T-MAX |
3,753 | - |
|
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POWER MOS 7® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 6200 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT50M50L2LLGMOSFET N-CH 500V 89A 264 MAX |
3,801 | - |
|
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POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 89A (Tc) | - | 50mOhm @ 44.5A, 10V | 5V @ 5mA | 200 nC @ 10 V | - | 10550 pF @ 25 V | - | - | - | - | - | Through Hole | 264 MAX™ [L2] |
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IXFN36N110PMOSFET N-CH 1100V 36A SOT-227B |
2,746 | - |
|
- |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 36A (Tc) | 10V | 240mOhm @ 500mA, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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STE70NM60MOSFET N-CH 600V 70A ISOTOP |
3,326 | - |
|
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MDmesh™ | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 55mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7300 pF @ 25 V | - | 600W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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IXFN44N80MOSFET N-CH 800V 44A SOT-227B |
3,392 | - |
|
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HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 165mOhm @ 500mA, 10V | 4.5V @ 8mA | 380 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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APT26M100JCU2MOSFET N-CH 1000V 26A SOT227 |
4,982 | - |
|
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POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT6013JLLMOSFET N-CH 600V 39A ISOTOP |
3,734 | - |
|
![]() Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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IXFN39N90MOSFET N-CH 900V 39A SOT-227B |
4,723 | - |
|
![]() Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 39A (Tc) | 10V | 220mOhm @ 500mA, 10V | 5V @ 8mA | 390 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |