制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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C2M0080170PSICFET N-CH 1700V 40A TO247-4 |
3,615 | - |
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- |
C2M™ | TO-247-4 | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 40A (Tc) | 20V | 125mOhm @ 28A, 20V | 4V @ 10mA | 120 nC @ 20 V | +25V, -10V | 2250 pF @ 1000 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
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APT58M50JMOSFET N-CH 500V 58A ISOTOP |
2,090 | - |
|
![]() Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT20M22JVRMOSFET N-CH 200V 97A ISOTOP |
3,608 | - |
|
![]() Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | - | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | - | 10200 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT10035LFLLGMOSFET N-CH 1000V 28A TO264 |
3,768 | - |
|
![]() Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | - | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | - | 5185 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10M11JVRU2MOSFET N-CH 100V 142A SOT227 |
3,015 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10M11JVRU3MOSFET N-CH 100V 142A SOT227 |
4,772 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10035B2FLLGMOSFET N-CH 1000V 28A T-MAX |
3,814 | - |
|
![]() Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT20M22JVRU2MOSFET N-CH 200V 97A SOT227 |
2,755 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT20M22JVRU3MOSFET N-CH 200V 97A SOT227 |
3,335 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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HCT7000MTXMOSFET N-CH 60V 200MA 3SMD |
3,410 | - |
|
![]() Tabla de datos |
- | 3-SMD, No Lead | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-SMD |
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APTM120DA56T1GMOSFET N-CH 1200V 18A SP1 |
2,045 | - |
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- |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APTM120SK56T1GMOSFET N-CH 1200V 18A SP1 |
3,996 | - |
|
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- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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IXFE36N100MOSFET N-CH 1000V 33A SOT227B |
2,841 | - |
|
![]() Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 33A (Tc) | 10V | 240mOhm @ 18A, 10V | 5.5V @ 8mA | 455 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 580W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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MMIX1F360N15T2MOSFET N-CH 150V 235A 24SMPD |
3,221 | - |
|
![]() Tabla de datos |
GigaMOS™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 235A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
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APT32M80JMOSFET N-CH 800V 33A ISOTOP |
2,582 | - |
|
![]() Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | ±30V | 9326 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT47M60JMOSFET N-CH 600V 49A ISOTOP |
5 | - |
|
![]() Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT58F50JMOSFET N-CH 500V 58A ISOTOP |
4,247 | - |
|
![]() Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT20M18LVFRGMOSFET N-CH 200V 100A TO264 |
2,488 | - |
|
![]() Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT8020B2FLLGMOSFET N-CH 800V 38A T-MAX |
3,700 | - |
|
![]() Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT50M75JLLU3MOSFET N-CH 500V 51A SOT227 |
3,035 | - |
|
![]() Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |