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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT5010JLLU3MOSFET N-CH 500V 41A SOT227 |
2,507 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
IXFN34N100MOSFET N-CH 1000V 34A SOT-227B |
2,753 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | 10V | 280mOhm @ 500mA, 10V | 5.5V @ 8mA | 380 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
AIMZHN120R010M1TXKSA1SIC_DISCRETE |
4,243 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 202A (Tc) | 18V, 20V | 11.3mOhm @ 93A, 20V | 5.1V @ 30mA | 178 nC @ 20 V | +23V, -5V | 5703 pF @ 800 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
STE70NM50MOSFET N-CH 500V 70A ISOTOP |
4,957 |
|
Tabla de datos |
MDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 70A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 600W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
IXFN24N100MOSFET N-CH 1KV 24A SOT-227B |
4,056 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
STE26NA90MOSFET N-CH 900V 26A ISOTOP |
3,406 |
|
Tabla de datos |
- | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 3.75V @ 1mA | 660 nC @ 10 V | ±30V | 1770 pF @ 25 V | - | 450W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT21M100JMOSFET N-CH 1000V 21A ISOTOP |
2,865 |
|
Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT58M50JU2MOSFET N-CH 500V 58A SOT227 |
2,108 |
|
Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
APT58M50JU3MOSFET N-CH 500V 58A SOT227 |
2,947 |
|
Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
APT19F100JMOSFET N-CH 1000V 20A ISOTOP |
3 |
|
Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IV1Q12050T3SIC MOSFET, 1200V 50MOHM, TO-247 |
3,409 |
|
Tabla de datos |
- | TO-247-3 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2770 pF @ 800 V | - | 327W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 | |
|
|
UJ4SC075010L8SSB750V/10MO,SICFET,G4,TOLL |
3,204 |
|
Tabla de datos |
- | 8-PowerSFN | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
APT6010B2FLLGMOSFET N-CH 600V 54A T-MAX |
3,795 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
APT80SM120SSICFET N-CH 1200V 80A D3PAK |
4,360 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | +25V, -10V | - | - | 625W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
IXFN60N60MOSFET N-CH 600V 60A SOT-227B |
2,414 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 75mOhm @ 500mA, 10V | 4.5V @ 8mA | 380 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
APT8020LLLGMOSFET N-CH 800V 38A TO264 |
2,992 |
|
Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
IXTT1N250HV-TRLMOSFET N-CH 2500V 1.5A TO268HV |
2,717 |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 1.5A (Tc) | 10V | 40Ohm @ 750mA, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXTT) |
|
IV1Q12050T4SIC MOSFET, 1200V 50MOHM, TO-247 |
2,610 |
|
Tabla de datos |
- | TO-247-4 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2750 pF @ 800 V | - | 344W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 | |
|
|
APT10045B2LLGMOSFET N-CH 1000V 23A T-MAX |
2,898 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
APT10035LLLGMOSFET N-CH 1000V 28A TO264 |
4,663 |
|
Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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