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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STE180NE10MOSFET N-CH 100V 180A ISOTOP |
2,075 |
|
Tabla de datos |
STripFET™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6Ohm @ 40A, 10V | 4V @ 250µA | 795 nC @ 10 V | ±20V | 21000 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT6010LFLLGMOSFET N-CH 600V 54A TO264 |
2,273 |
|
Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
IXFN52N90PMOSFET N-CH 900V 43A SOT227 |
3,139 |
|
- |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 43A (Tc) | 10V | 160mOhm @ 26A, 10V | 6.5V @ 1mA | 308 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
APT55M65JFLLMOSFET N-CH 550V 63A ISOTOP |
3,874 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 63A (Tc) | 10V | 65mOhm @ 31.5A, 10V | 5V @ 5mA | 205 nC @ 10 V | ±30V | 9165 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT12060LVFRGMOSFET N-CH 1200V 20A TO264 |
4,956 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | - | 600mOhm @ 10A, 10V | 4V @ 1mA | 650 nC @ 10 V | - | 9500 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
APT12067LFLLGMOSFET N-CH 1200V 18A TO264 |
2,153 |
|
Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | - | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 4420 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
APT25M100JMOSFET N-CH 1000V 25A ISOTOP |
2,900 |
|
Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 25A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APTM100DA33T1GMOSFET N-CH 1000V 23A SP1 |
3,041 |
|
Tabla de datos |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
IXFN38N100Q2MOSFET N-CH 1000V 38A SOT-227 |
4,505 |
|
Tabla de datos |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 250mOhm @ 19A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN20N120PMOSFET N-CH 1200V 20A SOT-227B |
2,399 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
APTC60DAM35T1GMOSFET N-CH 600V 72A SP1 |
2,484 |
|
Tabla de datos |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518 nC @ 10 V | ±20V | 14000 pF @ 25 V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
|
APTC60SKM35T1GMOSFET N-CH 600V 72A SP1 |
3,224 |
|
Tabla de datos |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518 nC @ 10 V | ±20V | 14000 pF @ 25 V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
APT8020B2LLGMOSFET N-CH 800V 38A T-MAX |
3,665 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | 10V | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
IXFN320N17T2MOSFET N-CH 170V 260A SOT227B |
3,656 |
|
Tabla de datos |
HiPerFET™, TrenchT2™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 260A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
SCTH70N120G2V-7SILICON CARBIDE POWER MOSFET 120 |
2,282 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 469W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
|
|
SCTL90N65G2VSILICON CARBIDE POWER MOSFET 650 |
1 |
|
Tabla de datos |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 24mOhm @ 40A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
|
|
MMIX1F210N30P3MOSFET N-CH 300V 108A 24SMPD |
4,446 |
|
Tabla de datos |
HiPerFET™, Polar3™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 108A (Tc) | - | 16mOhm @ 105A, 10V | 5V @ 8mA | - | - | 16200 pF @ 25 V | - | - | - | - | - | Surface Mount | 24-SMPD |
|
|
APT22F120B2MOSFET N-CH 1200V 23A T-MAX |
4,382 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 23A (Tc) | 10V | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT50M75JLLMOSFET N-CH 500V 51A ISOTOP |
3,569 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | - | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT47F60JMOSFET N-CH 600V 49A ISOTOP |
2,702 |
|
Tabla de datos |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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