制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IXTN21N100MOSFET N-CH 1000V 21A SOT227B |
3,436 | - |
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- |
MegaMOS™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 550mOhm @ 500mA, 10V | 4.5V @ 500µA | 250 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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APT1201R4BFLLGMOSFET N-CH 1200V 9A TO247 |
4,755 | - |
|
![]() Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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IXFK24N100FMOSFET N-CH 1000V 24A TO264 |
2,463 | - |
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- |
HiPerRF™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 195 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA |
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IXFB52N90PMOSFET N-CH 900V 52A PLUS264 |
2,052 | - |
|
![]() Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 52A (Tc) | 10V | 160mOhm @ 26A, 10V | 6.5V @ 1mA | 308 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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IXFE48N50QD2MOSFET N-CH 500V 41A SOT-227B |
3,873 | - |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFE48N50QD3MOSFET N-CH 500V 41A SOT-227B |
2,206 | - |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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SCTWA70N120G2V-4DISCRETE |
3,413 | - |
|
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- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 91A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 547W | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247-4 |
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APT8030LVRGMOSFET N-CH 800V 27A TO264 |
2,446 | - |
|
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POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT34F100B2MOSFET N-CH 1000V 35A T-MAX |
2,994 | - |
|
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POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT34F100LMOSFET N-CH 1000V 35A TO264 |
2,631 | - |
|
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- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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IXFL30N120PMOSFET N-CH 1200V 18A I5PAK |
2,174 | - |
|
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HiPerFET™, Polar | ISOPLUSi5-PAK™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 380mOhm @ 15A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUSi5-Pak™ |
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IXFE44N50QD2MOSFET N-CH 500V 39A SOT-227B |
3,979 | - |
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- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 39A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFE44N50QD3MOSFET N-CH 500V 39A SOT-227B |
2,371 | - |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 39A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXTF6N200P3MOSFET N-CH 2000V 4A I4PAC |
3,920 | - |
|
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Polar P3™ | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 4A (Tc) | 10V | 4.2Ohm @ 3A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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APT50M75B2FLLGMOSFET N-CH 500V 57A T-MAX |
4,484 | - |
|
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POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT84F50B2MOSFET N-CH 500V 84A T-MAX |
2,660 | - |
|
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POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT10M09LVFRGMOSFET N-CH 100V 100A TO264 |
3,848 | - |
|
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POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | - | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | - | 9875 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10078SLLGMOSFET N-CH 1000V 14A D3PAK |
3,260 | - |
|
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POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT8030LVFRGMOSFET N-CH 800V 27A TO264 |
2,758 | - |
|
![]() Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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STE139N65M5MOSFET N-CH 650V 130A ISOTOP |
2,011 | - |
|
- |
MDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | 5V @ 250µA | 363 nC @ 10 V | ±25V | 15600 pF @ 100 V | - | 672W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP |