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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GA20JT12-247TRANS SJT 1200V 20A TO247AB |
3,255 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
GA20JT12-263TRANS SJT 1200V 45A D2PAK |
2,886 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IRFPS38N60LMOSFET N-CH 600V 38A SUPER247 |
2,666 |
|
Tabla de datos |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 150mOhm @ 23A, 10V | 5V @ 250µA | 320 nC @ 10 V | ±30V | 7990 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
IGT60R070D1ATMA1GANFET N-CH 600V 31A 8HSOF |
2,672 |
|
Tabla de datos |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-3 |
|
APT44F80B2MOSFET N-CH 800V 47A T-MAX |
3,363 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 47A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT20M22LVFRGMOSFET N-CH 200V 100A TO264 |
3,796 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
IXFN140N25TMOSFET N-CH 250V 120A SOT227B |
3,894 |
|
Tabla de datos |
HiPerFET™, Trench | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
SCT011H75G3AGMOSFET 750 V 110A H2PAK7 |
3,080 |
|
Tabla de datos |
* | - | Cut Tape (CT) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT6015LVFRGMOSFET N-CH 600V 38A TO264 |
4,720 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 475 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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|
IXFX26N100PMOSFET N-CH 1000V 26A PLUS247-3 |
3,356 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXFL38N100PMOSFET N-CH 1000V 29A I5PAK |
3,623 |
|
Tabla de datos |
HiPerFET™, Polar | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 29A (Tc) | 10V | 230mOhm @ 19A, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUSi5-Pak™ |
|
|
IXFN280N085MOSFET N-CH 85V 280A SOT-227B |
3,046 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 85 V | 280A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 8mA | 580 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IGOT60R070D1AUMA1GANFET N-CH 600V 31A 20DSO |
2,362 |
|
Tabla de datos |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-87 |
|
APT20M19JVRMOSFET N-CH 200V 112A ISOTOP |
3,674 |
|
Tabla de datos |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 112A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 495 nC @ 10 V | ±30V | 11640 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IXFK26N100PMOSFET N-CH 1000V 26A TO264AA |
3,284 |
|
Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IXFZ140N25TMOSFET N-CH 250V 100A DE475 |
3,397 |
|
Tabla de datos |
HiPerFET™, Trench | 6-SMD, Flat Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 445W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DE475 |
|
VS-FB180SA10PMOSFET N-CH 100V 180A SOT-227 |
2,133 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.5mOhm @ 180A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
IXFN110N65X3DISCRETE MOSFET 110A 650V X3 SOT |
4,477 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IXFX26N120PMOSFET N-CH 1200V 26A PLUS247-3 |
4,981 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 500mOhm @ 13A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 16000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
IXFN32N60MOSFET N-CH 600V 32A SOT227B |
3,476 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 250mOhm @ 500mA, 10V | 4.5V @ 8mA | 325 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 520AW (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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