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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT66M60B2MOSFET N-CH 600V 70A T-MAX |
4,344 |
|
Tabla de datos |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 100mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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IXFR20N120PMOSFET N-CH 1200V 13A ISOPLUS247 |
3,041 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 13A (Tc) | 10V | 630mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
APT5010LVFRGMOSFET N-CH 500V 47A TO264 |
3,176 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
IXFR14N100Q2MOSFET N-CH 1000V 9.5A ISOPLS247 |
4,754 |
|
Tabla de datos |
HiPerFET™, Q2 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9.5A (Tc) | 10V | 1.1Ohm @ 7A, 10V | 5V @ 4mA | 83 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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GA04JT17-247TRANS SJT 1700V 4A TO247AB |
3,242 |
|
- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
APT6021SFLLGMOSFET N-CH 600V 29A D3PAK |
2,948 |
|
Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
IPDQ60R015CFD7XTMA1HIGH POWER_NEW |
3,015 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 149A (Tc) | 10V | 15mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 251 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 657W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
IXFN26N90MOSFET N-CH 900V 26A SOT-227B |
4,231 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXFT80N085MOSFET N-CH 85V 80A TO268 |
4,109 |
|
- |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 80A (Tc) | 10V | 9mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
IPT65R033G7XTMA1MOSFET N-CH 650V 69A 8HSOF |
2,853 |
|
Tabla de datos |
CoolMOS™ C7 | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 33mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110 nC @ 10 V | ±20V | 5000 pF @ 400 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IXFN48N55MOSFET N-CH 550V 48A SOT-227B |
2,937 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 48A (Tc) | 10V | 110mOhm @ 500mA, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
APT20M22LVRGMOSFET N-CH 200V 100A TO264 |
4,126 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
|
IXFN48N50MOSFET N-CH 500V 48A SOT-227B |
3,820 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
APT1201R6SVFRGMOSFET N-CH 1200V 8A D3PAK |
4,723 |
|
Tabla de datos |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | - | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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IXFR48N60Q3MOSFET N-CH 600V 32A ISOPLUS247 |
4,151 |
|
Tabla de datos |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 154mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
IXFN27N80MOSFET N-CH 800V 27A SOT-227B |
4,589 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | 10V, 15V | 300mOhm @ 13.5A, 10V | 4.5V @ 8mA | 400 nC @ 10 V | ±20V | 9740 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
AS1M040120TN-CHANNEL SILICON CARBIDE POWER |
1 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
IXUN280N10MOSFET N-CH 100V 280A SOT-227B |
2,490 |
|
- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 280A (Tc) | 10V | 5mOhm @ 140A, 10V | 4V @ 4mA | 440 nC @ 10 V | ±20V | 18000 pF @ 25 V | - | 770W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN90N30MOSFET N-CH 300V 90A SOT-227B |
2,685 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
TW070J120B,S1QSICFET N-CH 1200V 36A TO3P |
3,956 |
|
Tabla de datos |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 90mOhm @ 18A, 20V | 5.8V @ 20mA | 67 nC @ 20 V | ±25V, -10V | 1680 pF @ 800 V | - | 272W (Tc) | -55°C ~ 175°C | - | - | Through Hole | TO-3P(N) |
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