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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT1201R4SFLLGMOSFET N-CH 1200V 9A D3PAK |
2,782 |
|
Tabla de datos |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | - | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
|
APT6013B2LLGMOSFET N-CH 600V 43A T-MAX |
2,875 |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
APT6013LLLGMOSFET N-CH 600V 43A TO264 |
4,032 |
|
Tabla de datos |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
GA10SICP12-263TRANS SJT 1200V 25A D2PAK |
3,534 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
APT5510JFLLMOSFET N-CH 550V 44A ISOTOP |
3,573 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 5V @ 2.5mA | 124 nC @ 10 V | ±30V | 5823 pF @ 25 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
SCTH50N120-7SICFET N-CH 1200V 65A H2PAK-7 |
2,262 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A | 20V | 69mOhm @ 40A, 20V | 5.1V @ 1mA | 122 nC @ 20 V | +22V, -10V | 1900 pF @ 400 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
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|
IXTR210P10TMOSFET P-CH 100V 195A ISOPLUS247 |
4,593 |
|
Tabla de datos |
TrenchP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 195A (Tc) | 10V | 8mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
IXTT4N150HV-TRLMOSFET N-CH 1500V 4A TO268HV |
2,174 |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXTT) |
|
|
IXFL40N110PMOSFET N-CH 1100V 21A ISOPLUS264 |
4,098 |
|
Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 21A (Tc) | 10V | 280mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | - | - | - | - | Through Hole | ISOPLUS264™ |
|
|
APT12080LVRGMOSFET N-CH 1200V 16A TO264 |
2,962 |
|
- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
|
SCT30N120HSICFET N-CH 1200V 40A H2PAK-2 |
3,521 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
STE110NS20FDMOSFET N-CH 200V 110A ISOTOP |
3,718 |
|
Tabla de datos |
MESH OVERLAY™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 50A, 10V | 4V @ 250µA | 504 nC @ 10 V | ±20V | 7900 pF @ 25 V | - | 500W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
IXFN120N60X3DISCRETE MOSFET 120A 600V X3 SOT |
3,024 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT56F60B2MOSFET N-CH 600V 60A T-MAX |
4,969 |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
GS66516T-TRGS66516T-TR |
4,772 |
|
- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 1.3V @ 14mA | 12.1 nC @ 6 V | +7V, -10V | 520 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
IXFN340N06MOSFET N-CH 60V 340A SOT-227B |
3,951 |
|
Tabla de datos |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 8mA | 600 nC @ 10 V | ±20V | 16800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFR26N100PMOSFET N-CH 1000V 15A ISOPLUS247 |
3,438 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 430mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
APT10050LVFRGMOSFET N-CH 1000V 21A TO264 |
3,337 |
|
Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAX |
4,373 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
|
IXFN72N55Q2MOSFET N-CH 550V 72A SOT-227B |
3,852 |
|
- |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 72A (Tc) | 10V | 72mOhm @ 500mA, 10V | 5V @ 8mA | 258 nC @ 10 V | ±30V | 10500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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